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N-channel 200 V, 0.35 Ohm typ., 7 A Power MOSFET in DPAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STD7NS20T4 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
57P0820
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Newark | Mosfet, N Ch, 200V, 7A, To-252, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STD7NS20T4 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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STMicroelectronics | N-channel 200 V, 0.35 Ohm typ., 7 A Power MOSFET in DPAK package COO: China RoHS: Compliant Min Qty: 1 | 1993 |
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$1.5600 | Buy Now |
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Ameya Holding Limited | N-Channel 200 V 0.4 Ohm 45 W Surface Mount MESH Overlay Power Mosfet - TO-252 | 7173 |
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RFQ | |
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DISTI #
STD7NS20T4
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IBS Electronics | N-CHANNEL 200 V, 0.35 OHM TYP., 7 A POWER MOSFET IN DPAK PACKAGE Min Qty: 5000 Package Multiple: 1 | 0 |
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$0.6580 / $0.6720 | Buy Now |
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Chip Stock | N-channel200V,0.35Ohmtyp.,7APowerMOSFETinDPAKpackage | 28405 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 200V 7A DPAK | 24905 |
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$0.4181 / $0.6260 | Buy Now |
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STD7NS20T4
STMicroelectronics
Buy Now
Datasheet
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STD7NS20T4
STMicroelectronics
N-channel 200 V, 0.35 Ohm typ., 7 A Power MOSFET in DPAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-252AA | |
| Package Description | To-252, Dpak-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 1980-01-04 | |
| Avalanche Energy Rating (Eas) | 60 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for STD7NS20T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD7NS20T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STD7NS20 | STMicroelectronics | Check for Price | 7A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 | STD7NS20T4 vs STD7NS20 |
The STD7NS20T4 can operate up to 20 GHz, making it suitable for high-frequency applications.
To ensure proper biasing, follow the recommended biasing circuit and voltage levels outlined in the datasheet. Additionally, ensure the device is operated within the recommended temperature range.
The STD7NS20T4 can handle up to 20W of power, making it suitable for high-power applications. However, it's essential to follow proper thermal management and heat sinking to prevent overheating.
To minimize EMI, use proper shielding, grounding, and layout techniques. Ensure the device is placed in a shielded environment, and use bypass capacitors to reduce noise.
Follow the recommended PCB layout and thermal management guidelines outlined in the datasheet and application notes. Ensure proper heat sinking, thermal vias, and thermal pads are used to dissipate heat efficiently.