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N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-220FP package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STF11NM80 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
33R1190
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Newark | Mosfet, N-Ch, 800V, 11A, To-220Fp, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:11A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Stmicroelectronics STF11NM80 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 391 |
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$2.3300 / $2.5400 | Buy Now |
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DISTI #
STF11NM80
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Avnet Americas | - Rail/Tube (Alt: STF11NM80) COO: China RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tube | 0 |
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$2.7225 / $2.8948 | Buy Now |
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STMicroelectronics | N-channel 800 V, 380 mOhm typ., 11 A MDmesh Power MOSFET in a TO-220FP package COO: Italy RoHS: Compliant Min Qty: 1 | 922 |
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$2.8000 / $5.8100 | Buy Now |
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DISTI #
STF11NM80
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TME | Transistor: N-MOSFET, unipolar, 800V, 11A, 35W, TO220FP, ESD Min Qty: 1 | 146 |
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$2.5400 / $5.5700 | Buy Now |
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ComSIT USA | AVAILABLE EU | 395 |
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RFQ | |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ | |
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DISTI #
STF11NM80
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Avnet Silica | (Alt: STF11NM80) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days | Silica - 2100 |
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Buy Now | |
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Chip Stock | MOSFET,NCH,800V,11A,TO220FP, TransistorPolarity:NChannel, ContinuousDrai | 79328 |
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RFQ | |
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DISTI #
STF11NM80
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EBV Elektronik | (Alt: STF11NM80) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days | EBV - 2750 |
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Buy Now | |
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LCSC | 800V 11A 400m10V5.5A 150W 5V 1 N-Channel TO-220FP Single FETs MOSFETs RoHS | 870 |
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$0.8321 / $1.5253 | Buy Now |
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STF11NM80
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STF11NM80
STMicroelectronics
N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-220FP package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 400 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 35 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STF11NM80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STF11NM80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP11NM80 | STMicroelectronics | $2.4014 | N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-220 package | STF11NM80 vs STP11NM80 |
The maximum operating frequency of the STF11NM80 is 100 kHz, but it can be operated at higher frequencies with reduced performance.
To ensure reliability in high-temperature applications, it is recommended to follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's power handling capabilities.
A recommended PCB layout for the STF11NM80 includes using a multi-layer board, placing the device near the power source, and using a ground plane to minimize EMI.
Yes, the STF11NM80 is AEC-Q101 qualified, making it suitable for use in automotive applications, but it is essential to follow the recommended operating conditions and ensure compliance with automotive industry standards.
To protect the STF11NM80 from overvoltage and overcurrent, it is recommended to use a voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit, and to follow the recommended operating conditions.