Part Details for STFI15N60M2-EP by STMicroelectronics
Overview of STFI15N60M2-EP by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STFI15N60M2-EP
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-15957-5-ND
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DigiKey | MOSFET N-CH 600V 11A I2PAKFP Min Qty: 1 Lead time: 38 Weeks Container: Tube |
1496 In Stock |
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$1.0336 / $2.1800 | Buy Now |
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DISTI #
V99:2348_17700398
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Arrow Electronics | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) I2PAKFP Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 42 Weeks Date Code: 1642 | Americas - 1430 |
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$0.4569 / $0.4581 | Buy Now |
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DISTI #
25954387
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Verical | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) I2PAKFP Tube RoHS: Compliant Min Qty: 12 Package Multiple: 1 Date Code: 1642 | Americas - 1430 |
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$0.4581 | Buy Now |
Part Details for STFI15N60M2-EP
STFI15N60M2-EP CAD Models
STFI15N60M2-EP Part Data Attributes
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STFI15N60M2-EP
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STFI15N60M2-EP
STMicroelectronics
N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a I2PAKFP package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | I2PAKFP-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.378 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-281 | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |