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Part Details for STGP6NC60HD by STMicroelectronics
Results Overview of STGP6NC60HD by STMicroelectronics
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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Consumer Electronics
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STGP6NC60HD Information
STGP6NC60HD by STMicroelectronics is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STGP6NC60HD
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
26M3561
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Newark | Igbt, To-220, Continuous Collector Current:15A, Collector Emitter Saturation Voltage:2.5V, Power Dissipation:56W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C, Product Range:-, Msl:- Rohs Compliant: Yes |Stmicroelectronics STGP6NC60HD RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1734 |
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$0.7720 / $2.1000 | Buy Now |
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DISTI #
STGP6NC60HD
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Avnet Americas | Trans IGBT Chip N-CH 600V 15A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGP6NC60HD) COO: China RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 0 Days Container: Tube | 2000 |
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$0.4093 / $0.4352 | Buy Now |
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DISTI #
26M3561
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Avnet Americas | Trans IGBT Chip N-CH 600V 15A 3-Pin(3+Tab) TO-220 Tube (Alt: 26M3561) RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 0 |
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$0.8000 / $2.0900 | Buy Now |
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STMicroelectronics | N-channel 600 V, 7 A very fast IGBT COO: China RoHS: Compliant Min Qty: 1 | 3124 |
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$0.5600 / $1.7900 | Buy Now |
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DISTI #
STGP6NC60HD
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TME | Transistor: IGBT, 600V, 15A, 56W, TO220AB Min Qty: 1 | 129 |
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$0.8300 / $0.8600 | Buy Now |
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DISTI #
STGP6NC60HD
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Avnet Silica | Trans IGBT Chip NCH 600V 15A 3Pin3Tab TO220 Tube (Alt: STGP6NC60HD) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days | Silica - 23450 |
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Buy Now | |
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Chip Stock | STMICROELECTRONICSSTGP6NC60HDIGBTSingleTransistor,15A,2.5V,56W,600V,TO-220,3Pins | 2700 |
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RFQ | |
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DISTI #
STGP6NC60HD
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EBV Elektronik | Trans IGBT Chip NCH 600V 15A 3Pin3Tab TO220 Tube (Alt: STGP6NC60HD) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days | EBV - 225000 |
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Buy Now | |
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Win Source Electronics | N-channel 600V - 7A - D2PAK / TO-220 / TO-220FP Very fast PowerMESH TM IGBT | 1200 |
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$0.5465 / $0.8196 | Buy Now |
Part Details for STGP6NC60HD
STGP6NC60HD CAD Models
STGP6NC60HD Part Data Attributes
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STGP6NC60HD
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGP6NC60HD
STMicroelectronics
N-channel 600 V, 7 A very fast IGBT
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-220AB | |
| Package Description | To-220, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Collector Current-Max (IC) | 15 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | Single With Built-In Diode | |
| Gate-Emitter Thr Voltage-Max | 5.75 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 56 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Power Control | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Nom (toff) | 222 Ns | |
| Turn-on Time-Nom (ton) | 17.3 Ns |
Alternate Parts for STGP6NC60HD
This table gives cross-reference parts and alternative options found for STGP6NC60HD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STGP6NC60HD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IKA06N60TXKSA1 | Infineon Technologies AG | $1.4614 | Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | STGP6NC60HD vs IKA06N60TXKSA1 |
| 1MB20D-060 | Fuji Electric Co Ltd | Check for Price | Insulated Gate Bipolar Transistor, 38A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | STGP6NC60HD vs 1MB20D-060 |
| SGP13N60UF | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | STGP6NC60HD vs SGP13N60UF |
| IRGBC30FD2 | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | STGP6NC60HD vs IRGBC30FD2 |
| GT15H101 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor | STGP6NC60HD vs GT15H101 |
| IXDA20N120AS | IXYS Corporation | Check for Price | Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 | STGP6NC60HD vs IXDA20N120AS |
| IXGH35N120B | IXYS Corporation | Check for Price | Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | STGP6NC60HD vs IXGH35N120B |
| SGW15N120 | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN | STGP6NC60HD vs SGW15N120 |
| IXSH35N100A | IXYS Corporation | Check for Price | Insulated Gate Bipolar Transistor, 70A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | STGP6NC60HD vs IXSH35N100A |
| HGT1S3N60B3DS | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | STGP6NC60HD vs HGT1S3N60B3DS |
STGP6NC60HD Frequently Asked Questions (FAQ)
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The maximum junction temperature of the STGP6NC60HD is 175°C.
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Yes, the STGP6NC60HD is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast switching times.
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To ensure reliability, it is recommended to derate the power dissipation of the STGP6NC60HD according to the ambient temperature, and to use a suitable heat sink to keep the junction temperature below 150°C.
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The recommended gate resistor value for the STGP6NC60HD is between 10 Ω and 100 Ω, depending on the specific application and switching frequency.
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Yes, the STGP6NC60HD can be used in a parallel configuration to increase current handling, but it is recommended to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.