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Part Details for STL210N4F7AG by STMicroelectronics
Overview of STL210N4F7AG by STMicroelectronics
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for STL210N4F7AG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97Y9564
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Newark | Lv Mosfet Trench |Stmicroelectronics STL210N4F7AG Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
497-19311-1-ND
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DigiKey | MOSFET N-CH 40V 120A POWERFLAT Min Qty: 1 Lead time: 26 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3568 In Stock |
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$1.0004 / $2.3800 | Buy Now |
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DISTI #
STL210N4F7AG
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Avnet Americas | Trans MOSFET N-CH 40V 120A 8-Pin PowerFLAT - Tape and Reel (Alt: STL210N4F7AG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days Container: Reel | 6000 |
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$1.1164 / $1.1644 | Buy Now |
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DISTI #
511-STL210N4F7AG
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Mouser Electronics | MOSFET Automotive-grade N-channel 40 V, 1.3 mOhm typ 120 A STripFET F7 Power MOSFET RoHS: Compliant | 1860 |
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$1.0300 / $2.3800 | Buy Now |
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DISTI #
V36:1790_16518886
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Arrow Electronics | Trans MOSFET N-CH 40V 120A Automotive AEC-Q101 8-Pin Power Flat EP T/R Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks Date Code: 2404 | Americas - 3000 |
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$0.9888 / $1.0428 | Buy Now |
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STMicroelectronics | Automotive-grade N-channel 40 V, 1.3 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package RoHS: Compliant Min Qty: 1 | 2110 |
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$1.3000 / $2.3300 | Buy Now |
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Future Electronics | Single N-Channel 40 V 150 W 43 nC Silicon Surface Mount Mosfet - POWER FLAT RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks Container: Reel | 9000Reel |
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$1.0300 | Buy Now |
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Future Electronics | Single N-Channel 40 V 150 W 43 nC Silicon Surface Mount Mosfet - POWER FLAT RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Container: Cut Tape/Mini-Reel | 1083Cut Tape/Mini-Reel |
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$1.5400 / $2.0000 | Buy Now |
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Future Electronics | Single N-Channel 40 V 150 W 43 nC Silicon Surface Mount Mosfet - POWER FLAT RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Container: Cut Tape/Mini-Reel | 14Cut Tape/Mini-Reel |
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$1.5400 / $2.0000 | Buy Now |
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Future Electronics | Single N-Channel 40 V 150 W 43 nC Silicon Surface Mount Mosfet - POWER FLAT RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks Container: Reel | 0Reel |
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$1.0300 | Buy Now |
Part Details for STL210N4F7AG
STL210N4F7AG CAD Models
STL210N4F7AG Part Data Attributes
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STL210N4F7AG
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STL210N4F7AG
STMicroelectronics
Automotive-grade N-channel 40 V, 1.3 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STL210N4F7AG
This table gives cross-reference parts and alternative options found for STL210N4F7AG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STL210N4F7AG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 934066439118 | 120A, 40V, 0.0017ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3/2 | NXP Semiconductors | STL210N4F7AG vs 934066439118 |
| 934066498118 | Power Field-Effect Transistor, 120A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Nexperia | STL210N4F7AG vs 934066498118 |
| BUK951R9-40E,127 | N-channel TrenchMOS logic level FET TO-220 3-Pin | NXP Semiconductors | STL210N4F7AG vs BUK951R9-40E,127 |
| IPB015N04LG | Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STL210N4F7AG vs IPB015N04LG |
| IPB015N04LGXT | Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STL210N4F7AG vs IPB015N04LGXT |
| IPB015N04LGATMA1 | Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STL210N4F7AG vs IPB015N04LGATMA1 |
| BUK961R7-40E,118 | N-channel TrenchMOS logic level FET D2PAK 3-Pin | NXP Semiconductors | STL210N4F7AG vs BUK961R7-40E,118 |
Resources and Additional Insights for STL210N4F7AG
Reference Designs related to STL210N4F7AG
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Automotive Pumps
This highly versatile and efficient electric traction inverter solution can deliver 5kW of power for an automotive drivetrain at the common low speed electric vehicle battery voltage of 48V.<p>The design features an automotive SPC5 MCU with FOC library to control a programmable L9907 gate driver for three-phase synchronous motors, with fault monitoring and diagnostics capabilities.<p><p>The power is delivered through 36 STripFET F7 automotive-grade power MOSFETS arrayed on an insulated metal substrate (IMS) for superior thermal dissipation.<p>Bus link capacitors ensure a more stable supply input, and sensing elements provide the necessary motor current feedback information for effective motor control.