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Part Details for STP10N60M2 by STMicroelectronics
Overview of STP10N60M2 by STMicroelectronics
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STP10N60M2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
45AC7683
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Newark | Mosfet, N-Ch, 600V, 7.5A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:7.5A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STP10N60M2 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.7240 / $1.7200 | Buy Now |
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DISTI #
497-13970-5-ND
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DigiKey | MOSFET N-CH 600V 7.5A TO220 Min Qty: 1 Lead time: 16 Weeks Container: Tube |
700 In Stock |
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$0.5511 / $1.4700 | Buy Now |
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DISTI #
STP10N60M2
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Avnet Americas | Trans MOSFET N-CH 600V 7.5A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP10N60M2) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$0.6138 / $0.6402 | Buy Now |
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DISTI #
511-STP10N60M2
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Mouser Electronics | MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 RoHS: Compliant | 2317 |
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$0.5510 / $1.0400 | Buy Now |
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STMicroelectronics | N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 | 2317 |
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$0.6800 / $1.0200 | Buy Now |
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Future Electronics | N-Channel 600 V 85 W 0.6 Ohm Flange Mount Power MosFet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks Container: Tube | 4000Tube |
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$0.5550 / $0.6600 | Buy Now |
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Future Electronics | N-Channel 600 V 85 W 0.6 Ohm Flange Mount Power MosFet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Lead time: 20 Weeks Container: Tube | 0Tube |
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$0.5550 / $0.6600 | Buy Now |
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Future Electronics | N-Channel 600 V 85 W 0.6 Ohm Flange Mount Power MosFet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 10 Lead time: 16 Weeks Container: Tube | 0Tube |
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$0.5550 / $0.6850 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant |
499 Partner Stock |
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$0.6400 / $2.0500 | Buy Now |
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DISTI #
STP10N60M2
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TME | Transistor: N-MOSFET, MDmesh™ M2, unipolar, 600V, 4.9A, Idm: 30A Min Qty: 1 | 0 |
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$0.9600 / $1.4500 | RFQ |
Part Details for STP10N60M2
STP10N60M2 CAD Models
STP10N60M2 Part Data Attributes
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STP10N60M2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP10N60M2
STMicroelectronics
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | TO-220, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 110 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7.5 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 0.84 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 85 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |