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N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
56Y1083
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Newark | Lv Mosfet Trench |Stmicroelectronics STP110N8F6 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
24AC0022
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Newark | Ptd Low Voltage |Stmicroelectronics STP110N8F6 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.8150 / $1.0400 | Buy Now |
DISTI #
497-16019-5-ND
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DigiKey | MOSFET N-CH 80V 110A TO220 Min Qty: 1 Lead time: 32 Weeks Container: Tube |
749 In Stock |
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Buy Now | |
DISTI #
STP110N8F6
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Avnet Americas | Trans MOSFET N-CH 80V 110A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP110N8F6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Container: Tube | 734000 |
|
$0.8181 / $0.9310 | Buy Now |
DISTI #
511-STP110N8F6
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Mouser Electronics | MOSFET N-channel 80 V, 0.0056 Ohm typ 110 A, STripFET F6 Power MOSFET RoHS: Compliant | 3827 |
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$0.8360 / $1.8700 | Buy Now |
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STMicroelectronics | N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package RoHS: Compliant Min Qty: 1 | 3827 |
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$1.0300 / $1.8300 | Buy Now |
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Future Electronics | Single N-Channel 80 V 200 W 150 nC Silicon Through Hole Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1000 Container: Tube | 0Tube |
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$0.8450 / $1.0600 | Buy Now |
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Future Electronics | Single N-Channel 80 V 200 W 150 nC Silicon Through Hole Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1000 Container: Tube | 0Tube |
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$0.8450 / $1.0600 | Buy Now |
DISTI #
STP110N8F6
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Avnet Americas | Trans MOSFET N-CH 80V 110A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP110N8F6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Container: Tube | 734000 |
|
$0.8181 / $0.9310 | Buy Now |
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Ameya Holding Limited | Single N-Channel 80 V 200 W 150 nC Silicon Through Hole Mosfet - TO-220-3 | 14000 |
|
RFQ |
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STP110N8F6
STMicroelectronics
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Datasheet
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STP110N8F6
STMicroelectronics
N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | TO-220, 3 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 180 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 110 A | |
Drain-source On Resistance-Max | 0.0065 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 440 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STP110N8F6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP110N8F6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB06CNE8NG | Power Field-Effect Transistor, 100A I(D), 85V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | STP110N8F6 vs IPB06CNE8NG |