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N-Channel 100V - 0.028 Ohm - 40A - TO-220 LOW GATE CHARGE StripFET(TM) II POWER MOSFET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP40NF10L by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
26M3697
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Newark | N Channel Mosfet, 100V, 40A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:40A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Stmicroelectronics STP40NF10L RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 2242 |
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$0.7230 / $2.3900 | Buy Now |
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DISTI #
26M3697
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Avnet Americas | - Bulk (Alt: 26M3697) COO: Morocco RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 440 Partner Stock |
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$0.9010 / $2.3900 | Buy Now |
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DISTI #
STP40NF10L
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Avnet Americas | - Rail/Tube (Alt: STP40NF10L) COO: Singapore RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube | 0 |
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$0.4512 / $0.4606 | Buy Now |
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STMicroelectronics | N-Channel 100V - 0.028 Ohm - 40A - TO-220 LOW GATE CHARGE StripFET(TM) II POWER MOSFET COO: Singapore RoHS: Compliant Min Qty: 1 | 1061 |
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$0.9200 / $2.4900 | Buy Now |
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DISTI #
STP40NF10L
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TME | Transistor: N-MOSFET, STripFET™, unipolar, 100V, 25A, 150W, TO220-3 Min Qty: 1 | 84 |
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$0.6900 / $2.4000 | Buy Now |
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Ameya Holding Limited | STP40NF10L Series 100 V 33 mOhm N-Ch Low Gate Charge STripFET™ Mosfet TO-220 | 2324 |
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RFQ | |
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DISTI #
STP40NF10L
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Avnet Silica | (Alt: STP40NF10L) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days | Silica - 1800 |
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Buy Now | |
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DISTI #
STP40NF10L
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tube | 1000 |
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$0.7220 / $2.5300 | Buy Now |
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Chip Stock | N-channel100V-0.028Ohm-40A-TO-220LowGateChargeStripfet(tm)IIPowerMosfet | 11500 |
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RFQ | |
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DISTI #
STP40NF10L
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EBV Elektronik | (Alt: STP40NF10L) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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STP40NF10L
STMicroelectronics
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Datasheet
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STP40NF10L
STMicroelectronics
N-Channel 100V - 0.028 Ohm - 40A - TO-220 LOW GATE CHARGE StripFET(TM) II POWER MOSFET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-220AB | |
| Package Description | To-220, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Avalanche Energy Rating (Eas) | 430 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.036 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for STP40NF10L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP40NF10L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP4NK60Z | STMicroelectronics | $0.8954 | N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package | STP40NF10L vs STP4NK60Z |
| IPD90N06S4L06ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | STP40NF10L vs IPD90N06S4L06ATMA1 |
| FDP18N50 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | STP40NF10L vs FDP18N50 |
| FDB2572 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN | STP40NF10L vs FDB2572 |
| IRF610B_FP001 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220, 3 PIN | STP40NF10L vs IRF610B_FP001 |
| PHD3055L | NXP Semiconductors | Check for Price | 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 | STP40NF10L vs PHD3055L |
| FQA30N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | STP40NF10L vs FQA30N40 |
| FQB33N10L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 33A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | STP40NF10L vs FQB33N10L |
| IRFS730B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | STP40NF10L vs IRFS730B |
| SSS7N60B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | STP40NF10L vs SSS7N60B |
The maximum operating temperature range for the STP40NF10L is -55°C to 150°C.
To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is typically between 2V to 4V.
The maximum current rating for the STP40NF10L is 40A.
Use a voltage regulator to limit the voltage to the recommended maximum rating, and add a current limiter or fuse to prevent overcurrent conditions.
The thermal resistance of the STP40NF10L is typically around 1.5°C/W for the junction-to-ambient thermal resistance (RthJA).