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Part Details for STP60NF06L by STMicroelectronics
Results Overview of STP60NF06L by STMicroelectronics
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
STP60NF06L Information
STP60NF06L by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP60NF06L
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26M3706
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Newark | N Channel Mosfet, 60V, 60A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:60A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:5V, Gate Source Threshold Voltage Max:1V, Msl:- Rohs Compliant: Yes |Stmicroelectronics STP60NF06L RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 391 |
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$0.7600 / $2.2500 | Buy Now |
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DISTI #
STP60NF06L
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Avnet Americas | - Rail/Tube (Alt: STP60NF06L) COO: China RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 13 Weeks, 0 Days Container: Tube | 8000 |
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$0.6607 / $0.7025 | Buy Now |
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DISTI #
26M3706
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Avnet Americas | - Bulk (Alt: 26M3706) COO: China RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 391 Partner Stock |
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$0.7600 / $2.2500 | Buy Now |
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STMicroelectronics | N-channel 60 V, 0.012 Ohm typ., 60 A STripFET(TM) II Power MOSFET in TO-220 package COO: Singapore RoHS: Compliant Min Qty: 1 | 2776 |
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$0.9100 / $2.3200 | Buy Now |
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Bristol Electronics | 569 |
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RFQ | ||
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DISTI #
STP60NF06L
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TME | Transistor: N-MOSFET, STripFET™ II, unipolar, 60V, 42A, 110W Min Qty: 1 | 540 |
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$0.6700 / $2.2000 | Buy Now |
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DISTI #
STP60NF06L
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IBS Electronics | N-CHANNEL 60 V 0.012 OHM TYP. 60 A STRIPFET(TM) II POWER MOSFET IN TO-220 PACKAGE Min Qty: 50 Package Multiple: 1 | 750 |
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$0.7420 / $0.8260 | Buy Now |
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DISTI #
STP60NF06L
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Avnet Silica | (Alt: STP60NF06L) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days | Silica - 400 |
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Buy Now | |
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Chip Stock | N-channel60V,0.012Ohmtyp.,60ASTripFET(TM)IIPowerMOSFETinTO-220package | 2850 |
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RFQ | |
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DISTI #
STP60NF06L
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EBV Elektronik | (Alt: STP60NF06L) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days | EBV - 350 |
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Buy Now |
Part Details for STP60NF06L
STP60NF06L CAD Models
STP60NF06L Part Data Attributes
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STP60NF06L
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP60NF06L
STMicroelectronics
N-channel 60 V, 0.012 Ohm typ., 60 A STripFET(TM) II Power MOSFET in TO-220 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-220AB | |
| Package Description | Rohs Compliant, To-220, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Additional Feature | Low Threshold, Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 320 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STP60NF06L
This table gives cross-reference parts and alternative options found for STP60NF06L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP60NF06L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP4NK60Z | STMicroelectronics | $0.8967 | N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package | STP60NF06L vs STP4NK60Z |
| SSP10N60B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STP60NF06L vs SSP10N60B |
| IPD90N06S306ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN | STP60NF06L vs IPD90N06S306ATMA1 |
| STH8NA60 | STMicroelectronics | Check for Price | 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STP60NF06L vs STH8NA60 |
| STP7NE10 | STMicroelectronics | Check for Price | 7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STP60NF06L vs STP7NE10 |
| 934057024118 | NXP Semiconductors | Check for Price | 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 | STP60NF06L vs 934057024118 |
| FQA17N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | STP60NF06L vs FQA17N40 |
| STD65N6F3 | STMicroelectronics | Check for Price | 65A, 60V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, DPAK-3 | STP60NF06L vs STD65N6F3 |
| FQP17N08L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 16.5A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STP60NF06L vs FQP17N08L |
| STW80N06-10 | STMicroelectronics | Check for Price | 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STP60NF06L vs STW80N06-10 |
STP60NF06L Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STP60NF06L is -55°C to 150°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 10V and 60V.
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The recommended gate resistor value for the STP60NF06L is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
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Yes, the STP60NF06L is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
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To protect the STP60NF06L from overvoltage and overcurrent, use a voltage regulator or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.