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STP9NK90Z by: STMicroelectronics

N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a TO-220 package

Part Details for STP9NK90Z by STMicroelectronics

Results Overview of STP9NK90Z by STMicroelectronics

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

STP9NK90Z Information

STP9NK90Z by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STP9NK90Z

Part # Distributor Description Stock Price Buy
DISTI # STP9NK90Z
Avnet Americas - Rail/Tube (Alt: STP9NK90Z) COO: China RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.6151
  • 2,000 $1.6049
  • 4,000 $1.5752
  • 8,000 $1.5466
  • 16,000 $1.5189
$1.5189 / $1.6151 Buy Now
STMicroelectronics N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a TO-220 package COO: Singapore RoHS: Compliant Min Qty: 1 1963
  • 1 $1.8700
  • 10 $1.8700
  • 100 $1.8400
  • 500 $1.8000
$1.8000 / $1.8700 Buy Now
Bristol Electronics   43
RFQ
DISTI # STP9NK90Z
TME Transistor: N-MOSFET, unipolar, 900V, 5A, 160W, TO220-3, ESD Min Qty: 1 85
  • 1 $2.3600
  • 10 $1.9300
  • 25 $1.7200
  • 50 $1.6000
  • 100 $1.5600
  • 500 $1.5500
$1.5500 / $2.3600 Buy Now
ComSIT USA N-CHANNEL 900V-1.1OHM-8A-TO-220 ZENER-PROTECTED SUPERMESHTM MOSFET Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ECCN: EAR99 RoHS: Compliant Stock DE - 73
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # STP9NK90Z
IBS Electronics N-CHANNEL 900V - 1.1 OHM - 8A TO-220 ZENER PROTECTED SUPERMESH MOSFET Min Qty: 5 Package Multiple: 1 7
  • 5 $3.3880
  • 30 $3.3320
  • 125 $3.2760
  • 400 $3.2340
  • 1,500 $3.1360
$3.1360 / $3.3880 Buy Now
DISTI # STP9NK90Z
Avnet Silica (Alt: STP9NK90Z) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days Silica - 5000
Buy Now
Chip Stock STP9NK90ZN-channelMOSFETTransistor,8A,900V,3-PinTO-220 440
RFQ
DISTI # STP9NK90Z
EBV Elektronik (Alt: STP9NK90Z) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days EBV - 3500
Buy Now
Win Source Electronics MOSFET N-CH 900V 8A TO-220 315
  • 35 $1.8769
  • 75 $1.5408
  • 120 $1.4923
  • 160 $1.4438
  • 210 $1.3964
  • 280 $1.2520
$1.2520 / $1.8769 Buy Now

Part Details for STP9NK90Z

STP9NK90Z CAD Models

  • Part Symbol

    schematic symbol

  • Footprint

    pcb footprint

  • 3D Model

    2d presentation

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STP9NK90Z Part Data Attributes

Parametric Data
STP9NK90Z STMicroelectronics
Buy Now Datasheet
Compare Parts:
STP9NK90Z STMicroelectronics N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a TO-220 package
Rohs Code Yes
Part Life Cycle Code Active
Part Package Code TO-220AB
Package Description Rohs Compliant, To-220, 3 Pin
Pin Count 3
Reach Compliance Code Not Compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Additional Feature Avalanche Rated
Avalanche Energy Rating (Eas) 220 Mj
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 900 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 1.3 Ω
FET Technology Metal-Oxide Semiconductor
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Flange Mount
Peak Reflow Temperature (Cel) Not Specified
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 160 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Surface Mount No
Terminal Finish Matte Tin (Sn)
Terminal Form Through-Hole
Terminal Position Single
Time@Peak Reflow Temperature-Max (s) Not Specified
Transistor Application Switching
Transistor Element Material Silicon

Alternate Parts for STP9NK90Z

This table gives cross-reference parts and alternative options found for STP9NK90Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP9NK90Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
STP4NK60Z STMicroelectronics $0.8954 N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package STP9NK90Z vs STP4NK60Z
IPD90N06S4L06ATMA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 90A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 STP9NK90Z vs IPD90N06S4L06ATMA1
FDP18N50 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN STP9NK90Z vs FDP18N50
FDB2572 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN STP9NK90Z vs FDB2572
IRF610B_FP001 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220, 3 PIN STP9NK90Z vs IRF610B_FP001
PHD3055L NXP Semiconductors Check for Price 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 STP9NK90Z vs PHD3055L
FQA30N40 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN STP9NK90Z vs FQA30N40
FQB33N10L Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 STP9NK90Z vs FQB33N10L
IRFS730B Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN STP9NK90Z vs IRFS730B
SSS7N60B Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN STP9NK90Z vs SSS7N60B
equivalents icon

STP9NK90Z Related Parts

STP9NK90Z Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STP9NK90Z is -40°C to 150°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a suitable thermal interface material, and ensuring good airflow around the device.

  • The recommended gate drive voltage for the STP9NK90Z is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the STP9NK90Z from ESD, handle the device by the body or use an anti-static wrist strap, and ensure that the device is stored in an anti-static bag or container.

  • The maximum allowable power dissipation for the STP9NK90Z is 90W, but this can be increased with proper heat sinking and thermal management.

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