Part Details for STQ2NK60ZR-AP by STMicroelectronics
Overview of STQ2NK60ZR-AP by STMicroelectronics
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for STQ2NK60ZR-AP
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
41Y5987
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Newark | Tssop 20 Body 4.4 Pitch 0.65/Tape&reel 13" |Stmicroelectronics STQ2NK60ZR-AP Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Future Electronics | N-Channel 600 V 8 Ohm Zener Protected SuperMESH Power Mosfet - TO-92 AP RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Ammo Pack | 2000Ammo Pack |
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$0.2000 / $0.2150 | Buy Now |
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Ameya Holding Limited | N-Channel 600 V 8 Ohm Zener Protected SuperMESH Power Mosfet - TO-92 AP | 10000 |
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RFQ |
Part Details for STQ2NK60ZR-AP
STQ2NK60ZR-AP CAD Models
STQ2NK60ZR-AP Part Data Attributes
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STQ2NK60ZR-AP
STMicroelectronics
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Datasheet
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STQ2NK60ZR-AP
STMicroelectronics
N-channel 600 V, 7.2 Ohm, 0.4 A Zener-protected SuperMESH(TM) MOSFET in a TO-92 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-92 | |
| Package Description | CYLINDRICAL, O-PBCY-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 90 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 0.4 A | |
| Drain-source On Resistance-Max | 8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | O-PBCY-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3 W | |
| Pulsed Drain Current-Max (IDM) | 1.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |