Datasheets
STU3N80K5 by: STMicroelectronics

N-channel 800 V, 2.8 Ohm typ., 2.5 A MDmesh K5 Power MOSFET in an IPAK package

Part Details for STU3N80K5 by STMicroelectronics

Overview of STU3N80K5 by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for STU3N80K5

Part # Distributor Description Stock Price Buy
DISTI # 497-14223-5-ND
DigiKey MOSFET N-CH 800V 2.5A IPAK Min Qty: 1 Lead time: 14 Weeks Container: Tube Temporarily Out of Stock
  • 1 $1.4600
  • 75 $1.1755
  • 150 $0.9315
  • 525 $0.7896
  • 1,050 $0.6432
  • 2,025 $0.6055
  • 5,025 $0.5767
  • 10,050 $0.5501
$0.5501 / $1.4600 Buy Now
DISTI # STU3N80K5
Avnet Americas Trans MOSFET N-CH 800V 2.5A 3-Pin IPAK Tube - Rail/Tube (Alt: STU3N80K5) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Tube 0
  • 3,000 $0.6390
  • 6,000 $0.6259
  • 12,000 $0.6127
$0.6127 / $0.6390 Buy Now
DISTI # 511-STU3N80K5
Mouser Electronics MOSFET N-Ch 800V 2.8Ohm typ 2.5A Zener-protecte RoHS: Compliant 2731
  • 1 $1.4600
  • 10 $1.1800
  • 100 $0.9320
  • 500 $0.7900
  • 1,000 $0.6160
  • 3,000 $0.5760
  • 6,000 $0.5750
  • 9,000 $0.5500
$0.5500 / $1.4600 Buy Now
STMicroelectronics N-channel 800 V, 2.8 Ohm typ., 2.5 A MDmesh K5 Power MOSFET in an IPAK package RoHS: Compliant Min Qty: 1 2731
  • 1 $1.4300
  • 10 $1.1600
  • 100 $0.9100
  • 500 $0.7700
$0.7700 / $1.4300 Buy Now
Future Electronics N-Channel 800 V 3.5 Ohm Through Hole SuperMESH5 Power Mosfet - IPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Tube 0
Tube
  • 3,000 $0.5850
  • 6,000 $0.5650
$0.5650 / $0.5850 Buy Now
Future Electronics N-Channel 800 V 3.5 Ohm Through Hole SuperMESH5 Power Mosfet - IPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Tube 0
Tube
  • 3,000 $0.5850
  • 6,000 $0.5650
$0.5650 / $0.5850 Buy Now
DISTI # STU3N80K5
Avnet Americas Trans MOSFET N-CH 800V 2.5A 3-Pin IPAK Tube - Rail/Tube (Alt: STU3N80K5) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Tube 0
  • 3,000 $0.6390
  • 6,000 $0.6259
  • 12,000 $0.6127
$0.6127 / $0.6390 Buy Now
DISTI # STU3N80K5
Avnet Americas Trans MOSFET N-CH 800V 2.5A 3-Pin IPAK Tube - Rail/Tube (Alt: STU3N80K5) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Tube 0
  • 3,000 $0.6390
  • 6,000 $0.6259
  • 12,000 $0.6127
$0.6127 / $0.6390 Buy Now
DISTI # STU3N80K5
Avnet Silica Trans MOSFET N-CH 800V 2.5A 3-Pin IPAK Tube (Alt: STU3N80K5) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 2 Weeks, 1 Days Silica - 0
Buy Now
DISTI # STU3N80K5
EBV Elektronik Trans MOSFET N-CH 800V 2.5A 3-Pin IPAK Tube (Alt: STU3N80K5) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 2 Weeks, 1 Days EBV - 0
Buy Now
LCSC 800V 2.5A 2.810V1A 60W 5V100uA 1PCSNChannel TO-251(IPAK) MOSFETs ROHS 1
  • 1 $0.6810
  • 10 $0.5670
  • 30 $0.5100
  • 100 $0.4530
  • 500 $0.4194
  • 1,000 $0.4019
$0.4019 / $0.6810 Buy Now

Part Details for STU3N80K5

STU3N80K5 CAD Models

STU3N80K5 Part Data Attributes

STU3N80K5 STMicroelectronics
Buy Now Datasheet
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STU3N80K5 STMicroelectronics N-channel 800 V, 2.8 Ohm typ., 2.5 A MDmesh K5 Power MOSFET in an IPAK package
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer STMICROELECTRONICS
Package Description IPAK-3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 65 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 3.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Pulsed Drain Current-Max (IDM) 10 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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