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N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STW12N120K5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
30AC0976
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Newark | Ptd High Voltage Rohs Compliant: Yes |Stmicroelectronics STW12N120K5 RoHS: Compliant Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk | 900 |
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$6.4900 | Buy Now |
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DISTI #
69AH2885
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Newark | Mosfet, N-Ch, 1.2Kv, 12A, 150Deg C, 250W Rohs Compliant: Yes |Stmicroelectronics STW12N120K5 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 533 |
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$6.7600 / $11.8400 | Buy Now |
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DISTI #
STW12N120K5
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Avnet Americas | - Rail/Tube (Alt: STW12N120K5) COO: China RoHS: Compliant Min Qty: 600 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Tube | 900 |
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$4.5000 / $4.8000 | Buy Now |
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STMicroelectronics | N-channel 1200 V, 620 mOhm typ., 12 A MDmesh K5 Power MOSFET in a TO-247 package COO: Italy RoHS: Compliant Min Qty: 1 | 385 |
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$4.4100 / $9.6100 | Buy Now |
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DISTI #
STW12N120K5
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TME | Transistor: N-MOSFET, MDmesh™ K5, unipolar, 1200V, 7.6A, 250W, ESD Min Qty: 1 | 0 |
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$6.5600 / $9.4600 | RFQ |
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DISTI #
STW12N120K5
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Avnet Silica | (Alt: STW12N120K5) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days | Silica - 600 |
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Buy Now | |
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DISTI #
STW12N120K5
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tube | 551 |
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$4.9000 / $9.7900 | Buy Now |
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Chip Stock | N-channel1200V,0.62Ohmtyp.,12AMDmeshK5PowerMOSFETinTO-247package | 33500 |
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RFQ | |
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DISTI #
STW12N120K5
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EBV Elektronik | (Alt: STW12N120K5) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 18 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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|
LCSC | 1.2kV 12A 620m10V6A 250W 4V 1 N-Channel TO-247 Single FETs MOSFETs RoHS | 497 |
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$1.5635 / $2.7545 | Buy Now |
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STW12N120K5
STMicroelectronics
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Datasheet
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STW12N120K5
STMicroelectronics
N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-247 | |
| Package Description | Rohs Compliant Package-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.69 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for STW12N120K5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW12N120K5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STH12N120K5-2 | STMicroelectronics | $10.6717 | N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in H2PAK-2 package | STW12N120K5 vs STH12N120K5-2 |
| STP12N120K5 | STMicroelectronics | $3.0421 | N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220 package | STW12N120K5 vs STP12N120K5 |
The maximum junction temperature that the STW12N120K5 can withstand is 175°C.
To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and cooling systems.
The recommended gate drive voltage for the STW12N120K5 is between 10V and 15V, with a maximum voltage of 20V.
Yes, the STW12N120K5 can be used in a parallel configuration to increase current handling, but it's essential to ensure proper synchronization and thermal management to avoid uneven current sharing.
To protect the STW12N120K5 from overvoltage and overcurrent conditions, use a suitable voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit, such as a fuse or a current sense resistor.