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STW12N120K5 by: STMicroelectronics

N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package

Part Details for STW12N120K5 by STMicroelectronics

Results Overview of STW12N120K5 by STMicroelectronics

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

STW12N120K5 Information

STW12N120K5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STW12N120K5

Part # Distributor Description Stock Price Buy
DISTI # 30AC0976
Newark Ptd High Voltage Rohs Compliant: Yes |Stmicroelectronics STW12N120K5 RoHS: Compliant Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk 900
  • 120 $6.4900
$6.4900 Buy Now
DISTI # 69AH2885
Newark Mosfet, N-Ch, 1.2Kv, 12A, 150Deg C, 250W Rohs Compliant: Yes |Stmicroelectronics STW12N120K5 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 533
  • 1 $11.8400
  • 10 $7.4900
  • 25 $7.2000
  • 60 $6.9600
  • 120 $6.7600
$6.7600 / $11.8400 Buy Now
DISTI # STW12N120K5
Avnet Americas - Rail/Tube (Alt: STW12N120K5) COO: China RoHS: Compliant Min Qty: 600 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Tube 900
  • 600 $4.8000
  • 1,200 $4.7059
  • 2,400 $4.6392
  • 4,800 $4.5743
  • 9,600 $4.5000
$4.5000 / $4.8000 Buy Now
STMicroelectronics N-channel 1200 V, 620 mOhm typ., 12 A MDmesh K5 Power MOSFET in a TO-247 package COO: Italy RoHS: Compliant Min Qty: 1 385
  • 1 $9.6100
  • 10 $4.6400
  • 100 $4.4100
$4.4100 / $9.6100 Buy Now
DISTI # STW12N120K5
TME Transistor: N-MOSFET, MDmesh™ K5, unipolar, 1200V, 7.6A, 250W, ESD Min Qty: 1 0
  • 1 $9.4600
  • 5 $7.3000
  • 10 $6.5600
$6.5600 / $9.4600 RFQ
DISTI # STW12N120K5
Avnet Silica (Alt: STW12N120K5) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 600
Buy Now
DISTI # STW12N120K5
Chip One Stop Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tube 551
  • 1 $9.7900
  • 10 $4.9000
$4.9000 / $9.7900 Buy Now
Chip Stock N-channel1200V,0.62Ohmtyp.,12AMDmeshK5PowerMOSFETinTO-247package 33500
RFQ
DISTI # STW12N120K5
EBV Elektronik (Alt: STW12N120K5) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
LCSC 1.2kV 12A 620m10V6A 250W 4V 1 N-Channel TO-247 Single FETs MOSFETs RoHS 497
  • 1 $2.7545
  • 10 $2.3111
  • 30 $2.0325
  • 100 $1.7483
  • 500 $1.6190
  • 1,000 $1.5635
$1.5635 / $2.7545 Buy Now
Win Source Electronics Worldwide best FOM 30000
  • 22 $2.3106
  • 53 $1.8958
  • 82 $1.8366
  • 113 $1.7774
  • 146 $1.7181
  • 195 $1.5404
$1.5404 / $2.3106 Buy Now

Part Details for STW12N120K5

STW12N120K5 CAD Models

STW12N120K5 Part Data Attributes

STW12N120K5 STMicroelectronics
Buy Now Datasheet
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STW12N120K5 STMicroelectronics N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package
Rohs Code Yes
Part Life Cycle Code Active
Part Package Code TO-247
Package Description Rohs Compliant Package-3
Pin Count 3
Reach Compliance Code Not Compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Case Connection Drain
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.69 Ω
FET Technology Metal-Oxide Semiconductor
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Flange Mount
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 48 A
Surface Mount No
Terminal Finish Matte Tin (Sn) - Annealed
Terminal Form Through-Hole
Terminal Position Single
Transistor Application Switching
Transistor Element Material Silicon

Alternate Parts for STW12N120K5

This table gives cross-reference parts and alternative options found for STW12N120K5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW12N120K5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
STH12N120K5-2 STMicroelectronics $10.6717 N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in H2PAK-2 package STW12N120K5 vs STH12N120K5-2
STP12N120K5 STMicroelectronics $3.0421 N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220 package STW12N120K5 vs STP12N120K5
equivalents icon

STW12N120K5 Related Parts

STW12N120K5 Frequently Asked Questions (FAQ)

  • The maximum junction temperature that the STW12N120K5 can withstand is 175°C.

  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and cooling systems.

  • The recommended gate drive voltage for the STW12N120K5 is between 10V and 15V, with a maximum voltage of 20V.

  • Yes, the STW12N120K5 can be used in a parallel configuration to increase current handling, but it's essential to ensure proper synchronization and thermal management to avoid uneven current sharing.

  • To protect the STW12N120K5 from overvoltage and overcurrent conditions, use a suitable voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit, such as a fuse or a current sense resistor.

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