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120A, 75V, 0.0045ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB, ROHS COMPLIANT, TO-247, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STW160N75F3 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 6 |
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Vyrian | Discontinued | 1226 |
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RFQ |
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STW160N75F3
STMicroelectronics
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Datasheet
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STW160N75F3
STMicroelectronics
120A, 75V, 0.0045ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB, ROHS COMPLIANT, TO-247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-247AB | |
| Package Description | Rohs Compliant, To-247, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0045 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-247AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 330 W | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for STW160N75F3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW160N75F3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP210N75F6 | STMicroelectronics | Check for Price | 120A, 75V, 0.0037ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STW160N75F3 vs STP210N75F6 |
The maximum safe operating area (SOA) of the STW160N75F3 is not explicitly stated in the datasheet, but it can be determined by consulting the application notes and thermal design guidelines provided by STMicroelectronics. Typically, the SOA is defined by the maximum voltage, current, and temperature ratings of the device.
To ensure the reliability of the STW160N75F3 in high-temperature applications, it is essential to follow the recommended thermal design guidelines, including proper heat sinking, thermal interface materials, and cooling systems. Additionally, the device should be operated within the specified temperature range, and the junction temperature should be monitored to prevent overheating.
The recommended PCB layout and design considerations for the STW160N75F3 include using a multi-layer PCB with a solid ground plane, minimizing trace lengths and widths, and using thermal vias to improve heat dissipation. Additionally, the device should be placed in a location that minimizes thermal coupling with other components, and the PCB should be designed to minimize electromagnetic interference (EMI).
To select the correct gate driver for the STW160N75F3, consider the device's gate charge, gate-source voltage, and switching frequency requirements. The gate driver should be able to provide the necessary current and voltage to ensure proper switching of the device. Additionally, the gate driver should be compatible with the device's logic level and have a sufficient isolation voltage rating.
The STW160N75F3 has built-in ESD protection, but it is still essential to follow proper ESD handling precautions during assembly, storage, and handling. This includes using ESD-safe materials, grounding straps, and wrist straps, and minimizing the exposure of the device to static electricity.