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STW20NM60FD by: STMicroelectronics

N-CHANNEL 600V 0.26 Ohm 20A TO-247 FDmesh™ POWER MOSFET

Part Details for STW20NM60FD by STMicroelectronics

Results Overview of STW20NM60FD by STMicroelectronics

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STW20NM60FD Information

STW20NM60FD by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STW20NM60FD

Part # Distributor Description Stock Price Buy
DISTI # 94T3532
Newark Mosfet Transistor, N Channel, 20 A, 600 V, 0.26 Ohm, 10 V, 4 V Rohs Compliant: Yes |Stmicroelectronics STW20NM60FD RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 92
  • 1 $7.5600
  • 10 $4.0400
  • 25 $3.9800
  • 60 $3.9200
  • 120 $3.8600
$3.8600 / $7.5600 Buy Now
DISTI # 38AH9322
Newark Ptd High Voltage Rohs Compliant: Yes |Stmicroelectronics STW20NM60FD RoHS: Compliant Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 120 $3.7700
$3.7700 Buy Now
DISTI # STW20NM60FD
Avnet Americas - Rail/Tube (Alt: STW20NM60FD) COO: China RoHS: Compliant Min Qty: 600 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $3.1843
  • 1,200 $3.1643
  • 2,400 $3.1057
  • 4,800 $3.0492
  • 9,600 $2.9948
$2.9948 / $3.1843 Buy Now
STMicroelectronics N-channel 600 V, 260 mOhm typ., 20 A FDmesh Power MOSFET in a TO-247 package COO: Singapore RoHS: Compliant Min Qty: 1 555
  • 1 $7.3300
  • 10 $3.2600
  • 100 $3.0900
$3.0900 / $7.3300 Buy Now
Bristol Electronics   1834
RFQ
DISTI # STW20NM60FD
TME Transistor: N-MOSFET, FDmesh™, unipolar, 600V, 12.6A, 214W, TO247 Min Qty: 1 59
  • 1 $7.0500
  • 10 $3.8300
  • 30 $3.5700
  • 90 $3.3200
  • 120 $3.2500
  • 510 $2.9100
  • 990 $2.7600
$2.7600 / $7.0500 Buy Now
ComSIT USA N-CHANNEL 600V-0.26 OHM-20A TO-247 FDMESH POWER MOSFET (WITH FAST DIODE) Power Field-Effect Transistor, 20A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC ECCN: EAR99 RoHS: Compliant Stock DE - 80
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # STW20NM60FD
Avnet Silica (Alt: STW20NM60FD) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 2280
Buy Now
Chip Stock N-channel600V0.26Ohm20ATO-247Fdmeshâ„¢PowerMosfet 28500
RFQ
DISTI # STW20NM60FD
EBV Elektronik (Alt: STW20NM60FD) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 18 Weeks, 0 Days EBV - 2400
Buy Now
LCSC 600V 20A 290m10V 214W 5V250uA 1 N-Channel TO-247 Single FETs MOSFETs RoHS 7
  • 1 $4.4178
  • 10 $3.7653
  • 30 $3.3787
  • 100 $2.9875
  • 500 $2.8066
  • 1,000 $2.7246
$2.7246 / $4.4178 Buy Now

Part Details for STW20NM60FD

STW20NM60FD CAD Models

STW20NM60FD Part Data Attributes

STW20NM60FD STMicroelectronics
Buy Now Datasheet
Compare Parts:
STW20NM60FD STMicroelectronics N-CHANNEL 600V 0.26 Ohm 20A TO-247 FDmesh™ POWER MOSFET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-247AC
Package Description TO-247, 3 PIN
Pin Count 3
Reach Compliance Code Not Compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 700 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.29 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 214 W
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STW20NM60FD

This table gives cross-reference parts and alternative options found for STW20NM60FD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW20NM60FD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
STP4NK60Z STMicroelectronics $0.9301 N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package STW20NM60FD vs STP4NK60Z
NDB706AL Texas Instruments Check for Price 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB STW20NM60FD vs NDB706AL
IPB80N06S2LH5ATMA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN STW20NM60FD vs IPB80N06S2LH5ATMA1
STH8NA60FI STMicroelectronics Check for Price 5A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN STW20NM60FD vs STH8NA60FI
FQA48N20 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 48A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN STW20NM60FD vs FQA48N20
IXFH7N90Q Littelfuse Inc Check for Price Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 STW20NM60FD vs IXFH7N90Q
IPD90N06S306ATMA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN STW20NM60FD vs IPD90N06S306ATMA1
STW6NA80 STMicroelectronics Check for Price 5.4A, 800V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN STW20NM60FD vs STW6NA80
STB60NH02LT4 STMicroelectronics Check for Price 60A, 24V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 STW20NM60FD vs STB60NH02LT4
STD70N03L STMicroelectronics Check for Price 70A, 30V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, DPAK-3 STW20NM60FD vs STD70N03L
equivalents icon

STW20NM60FD Related Parts

STW20NM60FD Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STW20NM60FD is -40°C to 150°C.

  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.

  • The maximum current rating for the STW20NM60FD is 20A, but it's essential to consider the device's thermal limitations and ensure proper cooling to prevent overheating.

  • To protect the STW20NM60FD from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and ensure that all equipment and personnel are properly grounded.

  • Yes, the STW20NM60FD is suitable for high-frequency switching applications, but it's essential to consider the device's switching characteristics, including rise and fall times, and ensure proper layout and decoupling to minimize electromagnetic interference (EMI).

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