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N-CHANNEL 600V 0.26 Ohm 20A TO-247 FDmesh™ POWER MOSFET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STW20NM60FD by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
94T3532
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Newark | Mosfet Transistor, N Channel, 20 A, 600 V, 0.26 Ohm, 10 V, 4 V Rohs Compliant: Yes |Stmicroelectronics STW20NM60FD RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 92 |
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$3.8600 / $7.5600 | Buy Now |
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DISTI #
38AH9322
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Newark | Ptd High Voltage Rohs Compliant: Yes |Stmicroelectronics STW20NM60FD RoHS: Compliant Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$3.7700 | Buy Now |
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DISTI #
STW20NM60FD
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Avnet Americas | - Rail/Tube (Alt: STW20NM60FD) COO: China RoHS: Compliant Min Qty: 600 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$2.9948 / $3.1843 | Buy Now |
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STMicroelectronics | N-channel 600 V, 260 mOhm typ., 20 A FDmesh Power MOSFET in a TO-247 package COO: Singapore RoHS: Compliant Min Qty: 1 | 555 |
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$3.0900 / $7.3300 | Buy Now |
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Bristol Electronics | 1834 |
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RFQ | ||
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DISTI #
STW20NM60FD
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TME | Transistor: N-MOSFET, FDmesh™, unipolar, 600V, 12.6A, 214W, TO247 Min Qty: 1 | 59 |
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$2.7600 / $7.0500 | Buy Now |
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ComSIT USA | N-CHANNEL 600V-0.26 OHM-20A TO-247 FDMESH POWER MOSFET (WITH FAST DIODE) Power Field-Effect Transistor, 20A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
STW20NM60FD
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Avnet Silica | (Alt: STW20NM60FD) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days | Silica - 2280 |
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Buy Now | |
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Chip Stock | N-channel600V0.26Ohm20ATO-247Fdmeshâ„¢PowerMosfet | 28500 |
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RFQ | |
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DISTI #
STW20NM60FD
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EBV Elektronik | (Alt: STW20NM60FD) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 18 Weeks, 0 Days | EBV - 2400 |
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Buy Now |
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STW20NM60FD
STMicroelectronics
Buy Now
Datasheet
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STW20NM60FD
STMicroelectronics
N-CHANNEL 600V 0.26 Ohm 20A TO-247 FDmesh™ POWER MOSFET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-247AC | |
| Package Description | TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 700 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.29 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 214 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STW20NM60FD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW20NM60FD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP4NK60Z | STMicroelectronics | $0.9301 | N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package | STW20NM60FD vs STP4NK60Z |
| NDB706AL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STW20NM60FD vs NDB706AL |
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STW20NM60FD vs IPB80N06S2LH5ATMA1 |
| STH8NA60FI | STMicroelectronics | Check for Price | 5A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN | STW20NM60FD vs STH8NA60FI |
| FQA48N20 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 48A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | STW20NM60FD vs FQA48N20 |
| IXFH7N90Q | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | STW20NM60FD vs IXFH7N90Q |
| IPD90N06S306ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN | STW20NM60FD vs IPD90N06S306ATMA1 |
| STW6NA80 | STMicroelectronics | Check for Price | 5.4A, 800V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STW20NM60FD vs STW6NA80 |
| STB60NH02LT4 | STMicroelectronics | Check for Price | 60A, 24V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | STW20NM60FD vs STB60NH02LT4 |
| STD70N03L | STMicroelectronics | Check for Price | 70A, 30V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, DPAK-3 | STW20NM60FD vs STD70N03L |
The maximum operating temperature range for the STW20NM60FD is -40°C to 150°C.
To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.
The maximum current rating for the STW20NM60FD is 20A, but it's essential to consider the device's thermal limitations and ensure proper cooling to prevent overheating.
To protect the STW20NM60FD from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and ensure that all equipment and personnel are properly grounded.
Yes, the STW20NM60FD is suitable for high-frequency switching applications, but it's essential to consider the device's switching characteristics, including rise and fall times, and ensure proper layout and decoupling to minimize electromagnetic interference (EMI).