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Transistors / Power Field-Effect Transistors / STW28N65M2
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STW28N65M2 by: STMicroelectronics

N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package

Part Details for STW28N65M2 by STMicroelectronics

Overview of STW28N65M2 by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for STW28N65M2

Part # Distributor Description Stock Price Buy
DISTI # 07AH7136
Newark Mosfet, N-Ch, 650V, 20A, 170W, To-247, Transistor Polarity:N Channel, Continuous Drain Current Id:20A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.15Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Stmicroelectronics STW28N65M2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $4.3800
  • 10 $4.3600
  • 25 $3.3900
  • 60 $3.2200
  • 120 $3.0400
  • 270 $2.8200
$2.8200 / $4.3800 Buy Now
DISTI # 497-15575-5-ND
DigiKey MOSFET N-CH 650V 20A TO247 Min Qty: 1 Lead time: 16 Weeks Container: Tube 259
In Stock
  • 1 $5.0500
  • 30 $2.8273
  • 120 $2.3366
  • 510 $2.0557
  • 1,020 $1.8640
$1.8640 / $5.0500 Buy Now
DISTI # STW28N65M2
Avnet Americas Trans MOSFET N-CH 650V 20A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW28N65M2) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $1.9148
$1.9148 Buy Now
DISTI # 511-STW28N65M2
Mouser Electronics MOSFETs N-channel 650 V, 0.15 Ohm typ 20 A MDmesh M2 Power MOSFET in TO-247 package RoHS: Compliant 805
  • 1 $5.2100
  • 25 $2.9200
  • 100 $2.6600
  • 250 $2.3700
  • 600 $2.0900
  • 1,200 $1.8600
  • 3,000 $1.8500
$1.8500 / $5.2100 Buy Now
STMicroelectronics N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package RoHS: Compliant Min Qty: 1 805
  • 1 $5.1100
  • 10 $5.1100
  • 25 $2.8600
  • 100 $2.6100
  • 250 $2.3200
$2.3200 / $5.1100 Buy Now
Future Electronics N-Channel 650 V 0.18 Ohm Flange Mount MDmesh M2 Power Mosfet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 16 Weeks Container: Tube 3840
Tube
  • 30 $2.1200
  • 120 $2.0500
  • 450 $1.9900
  • 750 $1.9700
  • 1,500 $1.9000
$1.9000 / $2.1200 Buy Now
Future Electronics N-Channel 650 V 0.18 Ohm Flange Mount MDmesh M2 Power Mosfet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 600 Lead time: 20 Weeks Container: Tube 0
Tube
  • 600 $1.8800
  • 1,200 $1.8500
  • 1,800 $1.8300
  • 2,400 $1.8100
$1.8100 / $1.8800 Buy Now
Future Electronics N-Channel 650 V 0.18 Ohm Flange Mount MDmesh M2 Power Mosfet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks Container: Tube 0
Tube
  • 600 $1.8800
  • 1,200 $1.8500
  • 1,800 $1.8300
  • 2,400 $1.8100
$1.8100 / $1.8800 Buy Now
Future Electronics N-Channel 650 V 0.18 Ohm Flange Mount MDmesh M2 Power Mosfet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 30 Lead time: 16 Weeks Container: Tube 0
Tube
  • 1 $2.1600
  • 30 $2.1100
  • 125 $2.0400
  • 300 $2.0000
  • 1,250 $1.9000
$1.9000 / $2.1600 Buy Now
Future Electronics N-Channel 650 V 0.18 Ohm Flange Mount MDmesh M2 Power Mosfet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 2 Package Multiple: 2 Lead time: 16 Weeks Container: Cut Tape/Mini-Reel 0
Cut Tape/Mini-Reel
  • 1 $1.9000
$1.9000 Buy Now
DISTI # STW28N65M2
TME Transistor: N-MOSFET, MDmesh™ M2, unipolar, 650V, 13A, Idm: 80A Min Qty: 1 40
  • 1 $4.2900
  • 3 $3.8600
  • 10 $3.4200
  • 30 $3.0700
$3.0700 / $4.2900 Buy Now
DISTI # STW28N65M2
Avnet Silica Trans MOSFET N-CH 650V 20A 3-Pin TO-247 Tube (Alt: STW28N65M2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 1680
Buy Now
DISTI # C1S730201050125
Chip1Stop Trans MOSFET N-CH 650V 20A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant pbFree: Yes 600
  • 1 $4.9870
  • 25 $2.2500
$2.2500 / $4.9870 Buy Now
DISTI # STW28N65M2
EBV Elektronik Trans MOSFET N-CH 650V 20A 3-Pin TO-247 Tube (Alt: STW28N65M2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days EBV - 120
Buy Now

Part Details for STW28N65M2

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STW28N65M2 Part Data Attributes

Parametric Data
STW28N65M2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STW28N65M2 STMicroelectronics N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 760 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 170 W
Pulsed Drain Current-Max (IDM) 80 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STW28N65M2

This table gives cross-reference parts and alternative options found for STW28N65M2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW28N65M2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIHP22N60E-E3 TRANSISTOR 21 A, 600 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Vishay Siliconix STW28N65M2 vs SIHP22N60E-E3
SIHB180N60E-GE3 Power Field-Effect Transistor, Vishay Intertechnologies STW28N65M2 vs SIHB180N60E-GE3
IPP60R190C6XKSA1 Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STW28N65M2 vs IPP60R190C6XKSA1
Q67040-S4550 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 Infineon Technologies AG STW28N65M2 vs Q67040-S4550
STI23NM60ND 19.5A, 600V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN STMicroelectronics STW28N65M2 vs STI23NM60ND
SPW24N60CFDFKSA1 Power Field-Effect Transistor, 21.7A I(D), 600V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 Infineon Technologies AG STW28N65M2 vs SPW24N60CFDFKSA1
SPP20N60C3XKSA1 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STW28N65M2 vs SPP20N60C3XKSA1
APT20N60BCF Power Field-Effect Transistor, 20A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Microsemi Corporation STW28N65M2 vs APT20N60BCF
SIHP22N60E-E3 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies STW28N65M2 vs SIHP22N60E-E3
SPB20N60C3ATMA1 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STW28N65M2 vs SPB20N60C3ATMA1

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