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Part Details for STW55NM60ND by STMicroelectronics
Results Overview of STW55NM60ND by STMicroelectronics
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (1 option)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STW55NM60ND Information
STW55NM60ND by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STW55NM60ND
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
STW55NM60ND
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Avnet Americas | Power MOSFET, N Channel, 600 V, 51 A, 0.047 ohm, TO-247, Through Hole - Rail/Tube (Alt: STW55NM60ND) COO: China RoHS: Compliant Min Qty: 600 Package Multiple: 600 Container: Tube | 0 |
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$8.9454 / $9.5115 | Buy Now |
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Bristol Electronics | 550 |
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RFQ | ||
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ | |
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DISTI #
STW55NM60ND
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IBS Electronics | MOSFET TRANSISTOR N CHANNEL 51 A 600 V 0.047 OHM 10 V 4 V ROHS COMPLIANT: YES Min Qty: 600 Package Multiple: 1 | 0 |
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$9.0860 | Buy Now |
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DISTI #
STW55NM60ND
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Avnet Silica | Power MOSFET N Channel 600 V 51 A 0047 ohm TO247 Through Hole (Alt: STW55NM60ND) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Chip Stock | MosfetTransistor,NChannel,51A,600V,0.047Ohm,10V,4VRohsCompliant:Yes | 8500 |
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RFQ | |
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Component Electronics, Inc | TO-247 | 10 |
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$9.0000 / $13.8500 | Buy Now |
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DISTI #
STW55NM60ND
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EBV Elektronik | Power MOSFET N Channel 600 V 51 A 0047 ohm TO247 Through Hole (Alt: STW55NM60ND) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 18 Weeks, 0 Days | EBV - 1260 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 600V 51A TO-247 | 7000 |
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$10.3599 / $13.3816 | Buy Now |
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Wuhan P&S | MOSFET N-CH 600V 51A TO-247 Min Qty: 1 | 12 |
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$7.6500 / $9.5600 | Buy Now |
Part Details for STW55NM60ND
STW55NM60ND CAD Models
STW55NM60ND Part Data Attributes
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STW55NM60ND
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STW55NM60ND
STMicroelectronics
N-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Part Package Code | TO-247AC | |
| Package Description | Rohs Compliant, To-247, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 850 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 51 A | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 350 W | |
| Pulsed Drain Current-Max (IDM) | 204 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STW55NM60ND
This table gives cross-reference parts and alternative options found for STW55NM60ND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW55NM60ND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STW56N60DM2 | STMicroelectronics | $7.7689 | N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package | STW55NM60ND vs STW56N60DM2 |
STW55NM60ND Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STW55NM60ND is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.
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The recommended gate drive voltage for the STW55NM60ND is between 10V and 15V, with a maximum voltage of 20V.
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To minimize EMI, use proper PCB layout techniques, such as separating high-frequency and low-frequency circuits, using shielding, and implementing EMI filters.
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The maximum allowable current for the STW55NM60ND is 55A, with a maximum pulsed current of 110A.