Part Details for SUB70N03-09BP by Vishay Siliconix
Overview of SUB70N03-09BP by Vishay Siliconix
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for SUB70N03-09BP
SUB70N03-09BP CAD Models
SUB70N03-09BP Part Data Attributes:
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SUB70N03-09BP
Vishay Siliconix
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Datasheet
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SUB70N03-09BP
Vishay Siliconix
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SILICONIX INC | |
| Part Package Code | D2PAK | |
| Package Description | , | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 70 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 93 W | |
| Terminal Finish | Tin/Lead (Sn/Pb) |
Alternate Parts for SUB70N03-09BP
This table gives cross-reference parts and alternative options found for SUB70N03-09BP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUB70N03-09BP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFD3055 | 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | Rochester Electronics LLC | SUB70N03-09BP vs RFD3055 |
| SPP10N10 | 10.3A, 100V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN | Rochester Electronics LLC | SUB70N03-09BP vs SPP10N10 |
| FQA24N50 | 24A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, 3 PIN | Rochester Electronics LLC | SUB70N03-09BP vs FQA24N50 |
| 2N6768 | Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN | International Rectifier | SUB70N03-09BP vs 2N6768 |
| IRF621R | 5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | SUB70N03-09BP vs IRF621R |
| IRF610B | 3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | Rochester Electronics LLC | SUB70N03-09BP vs IRF610B |
| 934056482118 | 23A, 100V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 | NXP Semiconductors | SUB70N03-09BP vs 934056482118 |
| IRF720R | 3.3A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | SUB70N03-09BP vs IRF720R |
| FQP5P20 | 4.8A, 200V, 1.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Rochester Electronics LLC | SUB70N03-09BP vs FQP5P20 |
| FDB14AN06LA0 | 10A, 60V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN | Rochester Electronics LLC | SUB70N03-09BP vs FDB14AN06LA0 |