Part Details for SUD08P06-155L-E3 by Vishay Siliconix
Overview of SUD08P06-155L-E3 by Vishay Siliconix
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for SUD08P06-155L-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70026020
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RS | MOSFET, Power, P-Ch, VDSS -60V, RDS(ON) 0.125Ohm, ID -8.4A, TO-252,PD 25W, VGS +/-20V | Siliconix / Vishay SUD08P06-155L-E3 RoHS: Not Compliant Min Qty: 2000 Package Multiple: 1 Container: Bulk | 0 |
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$0.5900 / $0.7000 | RFQ |
Part Details for SUD08P06-155L-E3
SUD08P06-155L-E3 CAD Models
SUD08P06-155L-E3 Part Data Attributes
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SUD08P06-155L-E3
Vishay Siliconix
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Datasheet
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SUD08P06-155L-E3
Vishay Siliconix
TRANSISTOR 8.4 A, 60 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-252 | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 7.2 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 8.4 A | |
| Drain-source On Resistance-Max | 0.35 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SUD08P06-155L-E3
This table gives cross-reference parts and alternative options found for SUD08P06-155L-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUD08P06-155L-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFD8P06ESM9A | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | SUD08P06-155L-E3 vs RFD8P06ESM9A |
| RFD8P05SM | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | SUD08P06-155L-E3 vs RFD8P05SM |
| SPD08P06P | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | SUD08P06-155L-E3 vs SPD08P06P |
| RFD8P06ESM | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | SUD08P06-155L-E3 vs RFD8P06ESM |
| RFD8P05SM9A | 8A, 50V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | SUD08P06-155L-E3 vs RFD8P05SM9A |
| RFD8P06ESM9A | 8A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | SUD08P06-155L-E3 vs RFD8P06ESM9A |
| SFW9Z14 | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | SUD08P06-155L-E3 vs SFW9Z14 |
| SFR2955 | Power Field-Effect Transistor, 7.6A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | SUD08P06-155L-E3 vs SFR2955 |
| RF1S9640SM | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Fairchild Semiconductor Corporation | SUD08P06-155L-E3 vs RF1S9640SM |
| SSR2955 | Power Field-Effect Transistor, 12A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | SUD08P06-155L-E3 vs SSR2955 |