Part Details for SUD09P10-195-GE3 by Vishay Intertechnologies
Overview of SUD09P10-195-GE3 by Vishay Intertechnologies
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Security and Surveillance
Computing and Data Storage
Healthcare
Renewable Energy
Medical Imaging
Robotics and Drones
Price & Stock for SUD09P10-195-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
23T8552
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Newark | Mosfet Transistor, P Channel, -8.8 A, -100 V, 0.162 Ohm, -10 V, -1 V Rohs Compliant: Yes |Vishay SUD09P10-195-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 7548 |
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$0.6280 / $0.8980 | Buy Now |
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DISTI #
70AC6526
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Newark | Mosfet, P-Ch, -100V, -8.8A, 150Deg C, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:8.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V, Msl:-Rohs Compliant: Yes |Vishay SUD09P10-195-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1976 |
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$0.6180 / $0.8890 | Buy Now |
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DISTI #
86R4258
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Newark | Mosfet, P Channel, -100V, -8.8A, To-252-3, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:8.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:32.1W Rohs Compliant: Yes |Vishay SUD09P10-195-GE3 Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3330 / $0.3930 | Buy Now |
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DISTI #
SUD09P10-195-GE3
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Avnet Americas | Trans MOSFET P-CH 100V 8.8A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: SUD09P10-195-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.3375 / $0.4288 | Buy Now |
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DISTI #
70AC6526
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Avnet Americas | Trans MOSFET P-CH 100V 8.8A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 70AC6526) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 4 Days Container: Ammo Pack | 1976 Partner Stock |
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$0.6180 / $0.8890 | Buy Now |
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DISTI #
781-SUD09P10-195-GE3
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Mouser Electronics | MOSFET -100V 195mOhms@ 10V -8.8A RoHS: Compliant | 6309 |
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$0.3120 / $0.8300 | Buy Now |
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Future Electronics | Single P-Channel 100 V 0.195 Ohm Surface Mount Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 9 Weeks Container: Reel | 48000Reel |
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$0.3050 / $0.3250 | Buy Now |
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Future Electronics | Single P-Channel 100 V 0.195 Ohm Surface Mount Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$0.3050 / $0.3250 | Buy Now |
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Bristol Electronics | 13141 |
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RFQ | ||
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DISTI #
SUD09P10-195-GE3
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TTI | MOSFET -100V 195mOhms@ 10V -8.8A RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel | Americas - 0 |
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$0.3100 / $0.3410 | Buy Now |
Part Details for SUD09P10-195-GE3
SUD09P10-195-GE3 CAD Models
SUD09P10-195-GE3 Part Data Attributes
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SUD09P10-195-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SUD09P10-195-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 8.8A I(D), 100V, 0.195ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks, 4 Days | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 16.2 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 8.8 A | |
| Drain-source On Resistance-Max | 0.195 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 32.1 W | |
| Pulsed Drain Current-Max (IDM) | 15 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SUD09P10-195-GE3
This table gives cross-reference parts and alternative options found for SUD09P10-195-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUD09P10-195-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AP6679GJ | TRANSISTOR 75 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | SUD09P10-195-GE3 vs AP6679GJ |
| AP18P10GH | TRANSISTOR 12 A, 100 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | SUD09P10-195-GE3 vs AP18P10GH |
| SUD45P03-15-E3 | Power Field-Effect Transistor, 13A I(D), 30V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN | Vishay Siliconix | SUD09P10-195-GE3 vs SUD45P03-15-E3 |
| AP6679GH | TRANSISTOR 75 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | SUD09P10-195-GE3 vs AP6679GH |
| SUD50P04-13L-GE3 | Power Field-Effect Transistor, 50A I(D), 40V, 0.013ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3/2 | Vishay Intertechnologies | SUD09P10-195-GE3 vs SUD50P04-13L-GE3 |
| AP9575GI | TRANSISTOR 16 A, 60 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT PACKAGE, TO-220CFM, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | SUD09P10-195-GE3 vs AP9575GI |
| AP9575GH-HF | TRANSISTOR 15 A, 60 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | SUD09P10-195-GE3 vs AP9575GH-HF |
| AP9575AGH-HF | TRANSISTOR 17 A, 60 V, 0.064 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | SUD09P10-195-GE3 vs AP9575AGH-HF |
| AP18P10GI | TRANSISTOR 12 A, 100 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220CFM, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | SUD09P10-195-GE3 vs AP18P10GI |
| AP18P10GH-HF | TRANSISTOR POWER, FET, FET General Purpose Power | Advanced Power Electronics Corp | SUD09P10-195-GE3 vs AP18P10GH-HF |