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Transistors Power Field-Effect Transistors SUD20N10-66L-GE3

SUD20N10-66L-GE3
Description: Power Field-Effect Transistor, 16.9A I(D), 100V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2

Overview of SUD20N10-66L-GE3 by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 11 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 2 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SUD20N10-66L-GE3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # 57AJ0777
Newark Mosfet, N-Ch, 100V, 16.9A, To-252 Rohs Compliant: Yes |Vishay SUD20N10-66L-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 11986
  • 1 $1.0100
  • 25 $0.8090
  • 100 $0.4850
  • 500 $0.3840
  • 1,000 $0.2810
  • 2,500 $0.2630
  • 10,000 $0.2490
  • 25,000 $0.2430
$0.2430 / $1.0100 Buy Now
DISTI # 01X0090
Newark N-Channel 100-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SUD20N10-66L-GE3 RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.3820
  • 5,000 $0.3740
  • 10,000 $0.3450
  • 20,000 $0.3220
  • 30,000 $0.3000
  • 50,000 $0.2870
$0.2870 / $0.3820 Buy Now
DISTI # SUD20N10-66L-GE3
Avnet Americas Trans MOSFET N-CH 100V 16.9A 3-Pin TO-252 - Tape and Reel (Alt: SUD20N10-66L-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 2,000 $0.2664
$0.2664 Buy Now
DISTI # 78-SUD20N10-66L-GE3
Mouser Electronics MOSFETs N-Channel 100-V D-S RoHS: Compliant 5795
  • 1 $0.8200
  • 10 $0.7230
  • 100 $0.4940
  • 500 $0.4030
  • 1,000 $0.3510
  • 2,000 $0.3050
  • 4,000 $0.2800
  • 10,000 $0.2710
  • 24,000 $0.2690
$0.2690 / $0.8200 Buy Now
Future Electronics Trans MOSFET N-CH 100V 16.9A 3-Pin TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 2,000 $0.2850
  • 4,000 $0.2800
  • 6,000 $0.2750
  • 8,000 $0.2750
  • 10,000 $0.2650
$0.2650 / $0.2850 Buy Now
Future Electronics Trans MOSFET N-CH 100V 16.9A 3-Pin TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
Reel
  • 2,000 $0.2850
  • 4,000 $0.2800
  • 6,000 $0.2750
  • 8,000 $0.2750
  • 10,000 $0.2650
$0.2650 / $0.2850 Buy Now
Bristol Electronics   840
RFQ
DISTI # SUD20N10-66L-GE3
TTI MOSFETs N-Channel 100-V D-S RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel Americas - 4000
In Stock
  • 2,000 $0.3020
  • 4,000 $0.2770
  • 6,000 $0.2720
  • 10,000 $0.2660
$0.2660 / $0.3020 Buy Now
DISTI # SUD20N10-66L-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 100V, 16.9A, Idm: 25A Min Qty: 2000 0
  • 2,000 $0.3740
$0.3740 RFQ
DISTI # SUD20N10-66L-GE3
EBV Elektronik Trans MOSFET N-CH 100V 16.9A 3-Pin TO-252 (Alt: SUD20N10-66L-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now
LCSC 100V 16.9A 66m6.6A10V 3V250uA 1 N-Channel TO-252 MOSFETs ROHS 1492
  • 1 $0.4015
  • 10 $0.3591
  • 30 $0.3379
  • 100 $0.3167
  • 500 $0.3040
  • 1,000 $0.2970
$0.2970 / $0.4015 Buy Now

CAD Models for SUD20N10-66L-GE3 by Vishay Intertechnologies
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Part Data Attributes for SUD20N10-66L-GE3 by Vishay Intertechnologies
Parametric Data

SUD20N10-66L-GE3
Vishay Intertechnologies
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Factory Lead Time
20 Weeks
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
11.25 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
16.9 A
Drain-source On Resistance-Max
0.066 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
25 A
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. SUD20N10-66L-GE3
    Vishay Intertechnologies
    Power Field-Effect Transistor, 16.9A I(D), 100V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
    VS

Alternate Parts for SUD20N10-66L-GE3

This table gives cross-reference parts and alternative options found for SUD20N10-66L-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUD20N10-66L-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IPD64CN10NG Power Field-Effect Transistor, 17A I(D), 100V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG SUD20N10-66L-GE3 vs IPD64CN10NG
SI7322DN-T1-E3 Power Field-Effect Transistor, 18A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK1212-8 Vishay Intertechnologies SUD20N10-66L-GE3 vs SI7322DN-T1-E3

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