Datasheets
SUD50P04-08-GE3 by:

TRANSISTOR 50 A, 40 V, 0.0081 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power

Part Details for SUD50P04-08-GE3 by Vishay Siliconix

Overview of SUD50P04-08-GE3 by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SUD50P04-08-GE3

Part # Distributor Description Stock Price Buy
DISTI # SUD50P04-08-GE3CT-ND
DigiKey MOSFET P-CH 40V 50A TO252 Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 6150
In Stock
  • 1 $1.4400
  • 10 $1.1780
  • 100 $0.9163
  • 500 $0.7766
  • 1,000 $0.6327
  • 2,000 $0.5956
  • 6,000 $0.5672
  • 10,000 $0.5410
$0.5410 / $1.4400 Buy Now
DISTI # 70459612
RS MOSFET P-CH 40V 50A DPAK | Siliconix / Vishay SUD50P04-08-GE3 RoHS: Not Compliant Min Qty: 2000 Package Multiple: 1 Container: Bulk 0
  • 2,000 $1.4700
  • 20,000 $1.4000
  • 100,000 $1.3200
  • 200,000 $1.2500
$1.2500 / $1.4700 RFQ

Part Details for SUD50P04-08-GE3

SUD50P04-08-GE3 CAD Models

SUD50P04-08-GE3 Part Data Attributes:

SUD50P04-08-GE3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SUD50P04-08-GE3 Vishay Siliconix TRANSISTOR 50 A, 40 V, 0.0081 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-252
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 106 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.0081 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 73.5 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SUD50P04-08-GE3

This table gives cross-reference parts and alternative options found for SUD50P04-08-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUD50P04-08-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SUD50P04-08-GE3 Power Field-Effect Transistor, 50A I(D), 40V, 0.0081ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SUD50P04-08-GE3 vs SUD50P04-08-GE3
SUD50P04-15-E3 TRANSISTOR 50 A, 40 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, 3 PIN, FET General Purpose Power Vishay Siliconix SUD50P04-08-GE3 vs SUD50P04-15-E3
SUD50P04-15 Power Field-Effect Transistor, 50A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN Vishay Siliconix SUD50P04-08-GE3 vs SUD50P04-15
Part Number Description Manufacturer Compare
SUD50P04-09L-E3 TRANSISTOR 50 A, 40 V, 0.0094 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Vishay Siliconix SUD50P04-08-GE3 vs SUD50P04-09L-E3
IPD50P04P4L-11 Power Field-Effect Transistor, 50A I(D), 40V, 0.0106ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG SUD50P04-08-GE3 vs IPD50P04P4L-11
SUD50P04-08-GE3 Power Field-Effect Transistor, 50A I(D), 40V, 0.0081ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SUD50P04-08-GE3 vs SUD50P04-08-GE3
SUD50P04-15-E3 TRANSISTOR 50 A, 40 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, 3 PIN, FET General Purpose Power Vishay Siliconix SUD50P04-08-GE3 vs SUD50P04-15-E3
SUD50P04-15 Power Field-Effect Transistor, 50A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN Vishay Siliconix SUD50P04-08-GE3 vs SUD50P04-15
IPD50P04P4L11ATMA1 Power Field-Effect Transistor, 50A I(D), 40V, 0.0106ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 Infineon Technologies AG SUD50P04-08-GE3 vs IPD50P04P4L11ATMA1
IPD50P04P4L11ATMA2 Power Field-Effect Transistor, Infineon Technologies AG SUD50P04-08-GE3 vs IPD50P04P4L11ATMA2
NP50P04SLG-E1-AY Power MOSFETs for Automotive, MP-3ZK, /Embossed Tape Renesas Electronics Corporation SUD50P04-08-GE3 vs NP50P04SLG-E1-AY
SI7463ADP-T1-GE3 Power Field-Effect Transistor, 46A I(D), 40V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies SUD50P04-08-GE3 vs SI7463ADP-T1-GE3
SUD50P04-15-E3 Power Field-Effect Transistor, 50A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN Vishay Intertechnologies SUD50P04-08-GE3 vs SUD50P04-15-E3

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