| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
SUM65N20-30-E3CT-ND
|
DigiKey | MOSFET N-CH 200V 65A TO263 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5093 In Stock |
|
$2.2913 / $4.7100 | Buy Now | |
|
DISTI #
70617340
|
RS | SUM65N20-30-E3 N-channel MOSFET Transistor, 65 A, 200 V, 2+Tab-Pin TO-263 | Siliconix / Vishay SUM65N20-30-E3 RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Container: Bulk | 0 |
|
$4.0000 / $4.7100 | RFQ | |
| New Advantage Corporation | Single N-Channel 200 V 0.03 Ohms Surface Mount Power Mosfet - TO-263-3 RoHS: Compliant Min Qty: 1 Package Multiple: 800 | 14400 |
|
$2.0000 / $2.1400 | Buy Now |
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
VISHAY SILICONIX
|
|
Part Package Code
|
D2PAK
|
|
Package Description
|
SMALL OUTLINE, R-PSSO-G2
|
|
Pin Count
|
4
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
Vishay
|
|
Avalanche Energy Rating (Eas)
|
61 mJ
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
200 V
|
|
Drain Current-Max (ID)
|
65 A
|
|
Drain-source On Resistance-Max
|
0.03 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-263AB
|
|
JESD-30 Code
|
R-PSSO-G2
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
175 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
375 W
|
|
Pulsed Drain Current-Max (IDM)
|
140 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
MATTE TIN
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SUM65N20-30 | Power Field-Effect Transistor, 65A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Vishay Siliconix | SUM65N20-30-E3 vs SUM65N20-30 |
| SUM65N20-30-E3 | Power Field-Effect Transistor, 65A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN | Vishay Intertechnologies | SUM65N20-30-E3 vs SUM65N20-30-E3 |