Part Details for T1375DF65E by IXYS Corporation
Overview of T1375DF65E by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for T1375DF65E
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-T1375DF65E
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Mouser Electronics | IGBT Transistors | 0 |
|
$5,951.1700 | Order Now |
Part Details for T1375DF65E
T1375DF65E CAD Models
T1375DF65E Part Data Attributes
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T1375DF65E
IXYS Corporation
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Datasheet
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T1375DF65E
IXYS Corporation
Insulated Gate Bipolar Transistor,
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 1375 A | |
| Collector-Emitter Voltage-Max | 6500 V | |
| Configuration | SINGLE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | O-CEDB-X3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | ROUND | |
| Package Style | DISK BUTTON | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 16000 W | |
| Surface Mount | YES | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | END | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 6400 ns | |
| Turn-on Time-Nom (ton) | 4500 ns | |
| VCEsat-Max | 5.2 V |