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T2000BB45G by:

Insulated Gate Bipolar Transistor,

Part Details for T2000BB45G by Littelfuse Inc

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Part Details for T2000BB45G

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T2000BB45G Part Data Attributes

T2000BB45G Littelfuse Inc
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T2000BB45G Littelfuse Inc Insulated Gate Bipolar Transistor,
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Date Of Intro 2020-04-21
Samacsys Manufacturer LITTELFUSE
Collector Current-Max (IC) 2000 A
Collector-Emitter Voltage-Max 4500 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code O-CEDB-X3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 125 °C
Operating Temperature-Min -40 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style DISK BUTTON
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 15500 W
Surface Mount YES
Terminal Form UNSPECIFIED
Terminal Position END
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 8300 ns
Turn-on Time-Nom (ton) 5500 ns
VCEsat-Max 3.1 V

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