-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
TRANSISTOR 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Bristol Electronics | 4550 |
|
RFQ | ||
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 600V, 0.75OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 3640 |
|
$1.4940 / $3.9840 | Buy Now |
|
Win Source Electronics | Trans MOSFET N-CH Si 600V 10A 3-Pin(3+Tab) TO-220SIS / MOSFET N-CH 600V 10A TO220SIS | 30000 |
|
$0.2890 / $0.4340 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
TK10A60D
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
TK10A60D
Toshiba America Electronic Components
TRANSISTOR 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power
|
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | TOSHIBA CORP | |
Part Package Code | SC-67 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Avalanche Energy Rating (Eas) | 363 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.75 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 45 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |