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Part Details for TK39N60W by Toshiba America Electronic Components
Results Overview of TK39N60W by Toshiba America Electronic Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
TK39N60W Information
TK39N60W by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for TK39N60W
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 10 |
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$5.8240 / $8.9600 | Buy Now |
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Chip Stock | PowerField-EffectTransistor,38.8AI(D),600V,0.065ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor... | 3370 |
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RFQ | |
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Win Source Electronics | Switching Voltage Regulators | 1870 |
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$2.8889 / $4.3333 | Buy Now |
Part Details for TK39N60W
TK39N60W CAD Models
TK39N60W Part Data Attributes
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TK39N60W
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK39N60W
Toshiba America Electronic Components
TRANSISTOR POWER, FET, FET General Purpose Power
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SC-65, 3 PIN | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 608 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 38.8 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 270 W | |
| Pulsed Drain Current-Max (IDM) | 155 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TK39N60W
This table gives cross-reference parts and alternative options found for TK39N60W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK39N60W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NVHL082N65S3HF | onsemi | $5.5851 | Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 40 A, 82 mΩ, TO-247 fast recovery, TO-247-3LD, 450-TUBE, Automotive Qualified | TK39N60W vs NVHL082N65S3HF |
| IXKH35N60C5 | IXYS Corporation | $5.7698 | Power Field-Effect Transistor, 35A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | TK39N60W vs IXKH35N60C5 |
| NVHL082N65S3F | onsemi | $6.9833 | Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 40 A, 82 mΩ, TO-247, TO-247-3LD, 450-TUBE, Automotive Qualified | TK39N60W vs NVHL082N65S3F |
| STB43N65M5 | STMicroelectronics | $8.2168 | Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package | TK39N60W vs STB43N65M5 |
| IXKH35N60C5 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, | TK39N60W vs IXKH35N60C5 |
| IPB60R099C6 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | TK39N60W vs IPB60R099C6 |
| IXKP35N60C5 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 35A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | TK39N60W vs IXKP35N60C5 |
| IPW65R080CFD | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | TK39N60W vs IPW65R080CFD |
| TK39N60W5 | Toshiba America Electronic Components | Check for Price | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | TK39N60W vs TK39N60W5 |
| IPW65R080CFDAXK | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | TK39N60W vs IPW65R080CFDAXK |