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120mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
53Y4268
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Newark | Mosfet, P-Ch, 60V, 0.12A, To-236Ab, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:120Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.4V Rohs Compliant: Yes |Microchip TP0610T-G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 170 |
|
$0.5840 | Buy Now |
DISTI #
55AC4221
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Newark | D-Mosfet, P-Ch, -0.12A, -60V, To-236Ab-3 Transistor Polarity:P Channel Continuous Drain Current Id:-120Ma Drain Source Voltage Vds:-60V On Resistance Rds(On):10Ohm Rds(On) Test Voltage Vgs:-10V Threshold Voltage Vgs:-2.4V Rohs Compliant: Yes |Microchip TP0610T-G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
Buy Now | |
DISTI #
24AC4026
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Newark | Mosfet, P-Channel Enhancement-Mode, -60V, 10 Ohm Rohs Compliant: Yes |Microchip TP0610T-G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.6710 | Buy Now |
DISTI #
TP0610T-GCT-ND
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DigiKey | MOSFET P-CH 60V 120MA TO236AB Min Qty: 1 Lead time: 5 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
13280 In Stock |
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$1.2141 / $1.7700 | Buy Now |
DISTI #
53Y4268
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Avnet Americas | Trans MOSFET P-CH 60V 0.12A 3-Pin SOT-23 - Product that comes on tape, but is not reeled (Alt: 53Y4268) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 38 Weeks, 5 Days Container: Ammo Pack | 170 Partner Stock |
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$0.7380 | Buy Now |
DISTI #
TP0610T-G
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Avnet Americas | Trans MOSFET P-CH 60V 0.12A 3-Pin SOT-23 - Tape and Reel (Alt: TP0610T-G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 5 Weeks, 0 Days Container: Reel | 0 |
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$0.7100 / $0.9200 | Buy Now |
DISTI #
689-TP0610T-G
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Mouser Electronics | MOSFETs -60V 100hm RoHS: Compliant | 18960 |
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$0.7100 / $0.9200 | Buy Now |
DISTI #
TP0610T-G
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Microchip Technology Inc | MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V, 10 Ohm, Projected EOL: 2034-02-17 RoHS: Compliant pbFree: Yes |
2874 Alternates Available |
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$0.5400 / $0.9200 | Buy Now |
DISTI #
70452061
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RS | MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V, 10 Ohm3 SOT-23 T/R | Microchip Technology Inc. TP0610T-G RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Lead time: 7 Weeks, 0 Days Container: Bulk | 0 |
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$0.7900 / $0.9300 | RFQ |
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Future Electronics | Single P-Channel 60 V 25 Ohm 0.36 W Silicon Surface Mount Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 5 Weeks Container: Reel | 0Reel |
|
$0.6950 / $0.7300 | Buy Now |
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TP0610T-G
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
TP0610T-G
Microchip Technology Inc
120mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Package Description | 2.90 X 1.30 MM, 1.12 MM HEIGHT, GREEN PACKAGE-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 38 Weeks, 5 Days | |
Samacsys Manufacturer | Microchip | |
Additional Feature | LOW THRESHOLD | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.12 A | |
Drain-source On Resistance-Max | 10 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 10 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 0.36 W | |
Power Dissipation-Max (Abs) | 0.36 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for TP0610T-G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TP0610T-G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
VP0610T | Transistor, | Exar Corporation | TP0610T-G vs VP0610T |
TP0610TT2 | Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, | Temic Semiconductors | TP0610T-G vs TP0610TT2 |
NDS0610/D87Z | 120mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | Texas Instruments | TP0610T-G vs NDS0610/D87Z |
TP0610T | Transistor, | Vishay Intertechnologies | TP0610T-G vs TP0610T |
NDS0610D87Z | Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | TP0610T-G vs NDS0610D87Z |
TP0610T | Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SAME AS SOT-23, 3 PIN | Supertex Inc | TP0610T-G vs TP0610T |
TP0610T | Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN | Vishay Siliconix | TP0610T-G vs TP0610T |
TP0610TT1 | Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, | Temic Semiconductors | TP0610T-G vs TP0610TT1 |
NDS0610/L99Z | 120mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | Texas Instruments | TP0610T-G vs NDS0610/L99Z |
TP0610TT1 | Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN | Vishay Siliconix | TP0610T-G vs TP0610TT1 |