Datasheets
TP5322N8-G by:

0.26A, 220V, 12ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AA

Part Details for TP5322N8-G by Microchip Technology Inc

Overview of TP5322N8-G by Microchip Technology Inc

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Applications Consumer Electronics Audio and Video Systems Entertainment and Gaming

Price & Stock for TP5322N8-G

Part # Distributor Description Stock Price Buy
DISTI # 53Y4287
Newark Mosfet, P-Channel Enhancement-Mode, -220V, 12 Ohm 3 Sot-89 T/R Rohs Compliant: Yes |Microchip TP5322N8-G Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 100 $0.6790
$0.6790 Buy Now
DISTI # TP5322N8-G-ND
DigiKey MOSFET P-CH 220V 260MA TO243AA Min Qty: 2000 Lead time: 22 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 2,000 $0.6400
$0.6400 Buy Now
DISTI # TP5322N8-G
Avnet Americas Trans MOSFET P-CH 220V 0.26A 3-Pin TO-92 T/R - Tape and Reel (Alt: TP5322N8-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 4 Weeks, 0 Days Container: Reel 0
  • 1 $0.8600
  • 25 $0.7200
  • 100 $0.6400
$0.6400 / $0.8600 Buy Now
DISTI # 689-TP5322N8-G
Mouser Electronics MOSFET 220V 12 Ohm 0.7A RoHS: Compliant 2727
  • 1 $0.6000
  • 10 $0.5910
  • 25 $0.5750
  • 2,000 $0.5750
  • 4,000 $0.5740
$0.5740 / $0.6000 Buy Now
DISTI # TP5322N8-G
Microchip Technology Inc MOSFET, P-CHANNEL ENHANCEMENT-MODE, -220V, 12 Ohm, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 1800

Alternates Available
  • 1 $0.8600
  • 25 $0.7200
  • 100 $0.6400
  • 1,000 $0.5400
  • 5,000 $0.5000
$0.5000 / $0.8600 Buy Now
DISTI # 70483894
RS MOSFET, P-CHANNEL ENHANCEMENT-MODE, -220V, 12 Ohm3 SOT-89 T/R | Microchip Technology Inc. TP5322N8-G RoHS: Not Compliant Min Qty: 2000 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Bulk 0
  • 2,000 $0.8400
  • 20,000 $0.8000
  • 100,000 $0.7600
  • 200,000 $0.7200
$0.7200 / $0.8400 RFQ
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 0
  • 2,000 $0.4400
$0.4400 Buy Now
Onlinecomponents.com   RoHS: Compliant 1 In Stock
  • 1 $0.5014
  • 2,000 $0.4558
  • 4,000 $0.4321
  • 6,000 $0.4256
  • 8,000 $0.4160
  • 10,000 $0.4097
  • 16,000 $0.4036
  • 26,000 $0.3975
$0.3975 / $0.5014 Buy Now
DISTI # TP5322N8-G
Avnet Americas Trans MOSFET P-CH 220V 0.26A 3-Pin TO-92 T/R - Tape and Reel (Alt: TP5322N8-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 4 Weeks, 0 Days Container: Reel 0
  • 1 $0.8600
  • 25 $0.7200
  • 100 $0.6400
$0.6400 / $0.8600 Buy Now
DISTI # TP5322N8-G
TME Transistor: P-MOSFET, unipolar, -220V, -0.7A, 1.6W, SOT89-3 Min Qty: 1 0
  • 1 $0.8000
  • 3 $0.7000
  • 10 $0.6000
  • 100 $0.5500
$0.5500 / $0.8000 RFQ
Ameya Holding Limited MOSFET P-CH 220V 0.26A SOT89-3 43800
RFQ
DISTI # TP5322N8-G
Avnet Americas Trans MOSFET P-CH 220V 0.26A 3-Pin TO-92 T/R - Tape and Reel (Alt: TP5322N8-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 4 Weeks, 0 Days Container: Reel 0
  • 1 $0.8600
  • 25 $0.7200
  • 100 $0.6400
$0.6400 / $0.8600 Buy Now
NAC MOSFET, P-CHANNEL ENHANCEMENT-MODE, -220V, 12 Ohm - Package: 3 SOT-89 T/R RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 0
  • 1 $0.5100
  • 100 $0.4600
  • 500 $0.4200
  • 1,000 $0.4100
$0.4100 / $0.5100 Buy Now
Master Electronics   RoHS: Compliant 1 In Stock
  • 1 $0.5014
  • 2,000 $0.4558
  • 4,000 $0.4321
  • 6,000 $0.4256
  • 8,000 $0.4160
  • 10,000 $0.4097
  • 16,000 $0.4036
  • 26,000 $0.3975
$0.3975 / $0.5014 Buy Now

Part Details for TP5322N8-G

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TP5322N8-G Part Data Attributes

TP5322N8-G Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
TP5322N8-G Microchip Technology Inc 0.26A, 220V, 12ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AA
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description GREEN PACKAGE-4
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 4 Weeks
Samacsys Manufacturer Microchip
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 220 V
Drain Current-Max (ID) 0.26 A
Drain-source On Resistance-Max 12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 20 pF
JEDEC-95 Code TO-243AA
JESD-30 Code R-PSSO-F3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Pulsed Drain Current-Max (IDM) 0.9 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 35 ns
Turn-on Time-Max (ton) 25 ns

Alternate Parts for TP5322N8-G

This table gives cross-reference parts and alternative options found for TP5322N8-G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TP5322N8-G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
TP5322N8-G Power Field-Effect Transistor, 0.26A I(D), 220V, 12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA, GREEN PACKAGE-4 Supertex Inc TP5322N8-G vs TP5322N8-G
TP5322N8 Power Field-Effect Transistor, 0.26A I(D), 220V, 12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA, SOT-89, 4 PIN Supertex Inc TP5322N8-G vs TP5322N8
Part Number Description Manufacturer Compare
2SJ76 0.5A, 140V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Renesas Electronics Corporation TP5322N8-G vs 2SJ76
TP5322N8 Power Field-Effect Transistor, 0.26A I(D), 220V, 12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA, SOT-89, 4 PIN Supertex Inc TP5322N8-G vs TP5322N8
2SJ79 Power Field-Effect Transistor, 0.5A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Hitachi Ltd TP5322N8-G vs 2SJ79
TP5322N8-G Power Field-Effect Transistor, 0.26A I(D), 220V, 12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA, GREEN PACKAGE-4 Supertex Inc TP5322N8-G vs TP5322N8-G
2SJ79 0.5A, 200V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Renesas Electronics Corporation TP5322N8-G vs 2SJ79
2SJ77 0.5A, 160V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Renesas Electronics Corporation TP5322N8-G vs 2SJ77
TP0620N5 Power Field-Effect Transistor, 1.4A I(D), 200V, 12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Supertex Inc TP5322N8-G vs TP0620N5
TP0616N5 Power Field-Effect Transistor, 1.4A I(D), 160V, 12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Supertex Inc TP5322N8-G vs TP0616N5
2SJ77 Power Field-Effect Transistor, 0.5A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Hitachi Ltd TP5322N8-G vs 2SJ77
2SJ76 Power Field-Effect Transistor, 0.5A I(D), 140V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Hitachi Ltd TP5322N8-G vs 2SJ76

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