Part Details for TSM2NB60CPROG by Taiwan Semiconductor
Overview of TSM2NB60CPROG by Taiwan Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for TSM2NB60CPROG
TSM2NB60CPROG CAD Models
TSM2NB60CPROG Part Data Attributes
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TSM2NB60CPROG
Taiwan Semiconductor
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Datasheet
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TSM2NB60CPROG
Taiwan Semiconductor
Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 65 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 4.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TSM2NB60CPROG
This table gives cross-reference parts and alternative options found for TSM2NB60CPROG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TSM2NB60CPROG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N65LG-TA3-T | Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | TSM2NB60CPROG vs 2N65LG-TA3-T |
| 2N65LG-TM3-T | Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | TSM2NB60CPROG vs 2N65LG-TM3-T |
| 2N60LG-TND-R | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252D, 3/2 PIN | Unisonic Technologies Co Ltd | TSM2NB60CPROG vs 2N60LG-TND-R |
| 2N65LG-TN3-R | Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | TSM2NB60CPROG vs 2N65LG-TN3-R |
| STD2HNK60Z | N-channel 600 V, 3.5 Ohm typ., 2 A SuperMESH Power MOSFET in a DPAK package | STMicroelectronics | TSM2NB60CPROG vs STD2HNK60Z |
| PJ2N60CH | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AB, TO-251, 3 PIN | Promax-Johnton Electronic Corporation | TSM2NB60CPROG vs PJ2N60CH |
| 2N60LL-TMS2-T | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251S2, 3 PIN | Unisonic Technologies Co Ltd | TSM2NB60CPROG vs 2N60LL-TMS2-T |
| STD1HNK60Z-1 | 1.9A, 600V, 4.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | STMicroelectronics | TSM2NB60CPROG vs STD1HNK60Z-1 |
| 2N60LG-T2Q-T | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Unisonic Technologies Co Ltd | TSM2NB60CPROG vs 2N60LG-T2Q-T |
| 2N65L-TMA-T | Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251L, 3 PIN | Unisonic Technologies Co Ltd | TSM2NB60CPROG vs 2N65L-TMA-T |