Datasheets
ULBM45 by: Advanced Semiconductor Inc

Overview of: ULBM45 by Advanced Semiconductor Inc

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Part Details for: ULBM45

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Part Data Attributes

ULBM45 Advanced Semiconductor Inc

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ULBM45 Advanced Semiconductor Inc RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, 6L, FM-6

Part Life Cycle Code Active
Package Description FLANGE MOUNT, O-CXFM-F6
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 10 A
Collector-Base Capacitance-Max 150 pF
Collector-Emitter Voltage-Max 16 V
Configuration SINGLE
DC Current Gain-Min (hFE) 20
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code O-CXFM-F6
Number of Elements 1
Number of Terminals 6
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 175 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position UNSPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for: ULBM45

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Part Number Description Manufacturer Compare
SD1434 Transistors Trans GP BJT NPN 16V 10A 4-Pin Case M-111 New Jersey Semiconductor Products Inc ULBM45 vs SD1434
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MS1490 Transistors RF Power Field-Effect Transistor, NPN, Microsemi Corporation ULBM45 vs MS1490
NTE367 Transistors RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, W65, 4 PIN NTE Electronics Inc ULBM45 vs NTE367
MS1480 Transistors RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M111, 6 PIN Microsemi Corporation ULBM45 vs MS1480
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