Part Details for UPA812T-T1GB by NEC Compound Semiconductor Devices Ltd
Overview of UPA812T-T1GB by NEC Compound Semiconductor Devices Ltd
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Part Details for UPA812T-T1GB
UPA812T-T1GB CAD Models
UPA812T-T1GB Part Data Attributes
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UPA812T-T1GB
NEC Compound Semiconductor Devices Ltd
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Datasheet
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UPA812T-T1GB
NEC Compound Semiconductor Devices Ltd
RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NEC COMPOUND SEMICONDUCTOR DEVICES LTD | |
Package Description | PLASTIC, SO-6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOW NOISE | |
Collector Current-Max (IC) | 0.065 A | |
Collector-Base Capacitance-Max | 0.9 pF | |
Collector-Emitter Voltage-Max | 10 V | |
Configuration | SEPARATE, 2 ELEMENTS | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e0 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 7000 MHz |