Part Details for VMO550-01F by IXYS Corporation
Overview of VMO550-01F by IXYS Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Aerospace and Defense
Agriculture Technology
Robotics and Drones
Price & Stock for VMO550-01F
Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2 Package Multiple: 2 Lead time: 28 Weeks Container: Box | 0Box |
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$381.4200 | Buy Now |
DISTI #
VMO550-01F
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TME | Module, single transistor, 100V, 590A, Y3-DCB, Idm: 2.36kA, 2.2kW Min Qty: 1 | 0 |
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$427.6000 / $538.1300 | RFQ |
Part Details for VMO550-01F
VMO550-01F CAD Models
VMO550-01F Part Data Attributes
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VMO550-01F
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
VMO550-01F
IXYS Corporation
Power Field-Effect Transistor, 590A I(D), 100V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 590 A | |
Drain-source On Resistance-Max | 0.0021 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2200 W | |
Pulsed Drain Current-Max (IDM) | 2360 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |