Part Details for VMO550-01F by Littelfuse Inc
Overview of VMO550-01F by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Aerospace and Defense
Agriculture Technology
Robotics and Drones
Price & Stock for VMO550-01F
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH5850
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Newark | Mosfet Module - Others Y3-Dcb/Box |Littelfuse VMO550-01F RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for VMO550-01F
VMO550-01F CAD Models
VMO550-01F Part Data Attributes
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VMO550-01F
Littelfuse Inc
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Datasheet
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VMO550-01F
Littelfuse Inc
Power Field-Effect Transistor, 590A I(D), 100V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | FLANGE MOUNT, R-PUFM-X4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 590 A | |
Drain-source On Resistance-Max | 0.0021 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2200 W | |
Pulsed Drain Current-Max (IDM) | 2360 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |