Part Details for VP1116N5 by Supertex Inc
Overview of VP1116N5 by Supertex Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for VP1116N5
VP1116N5 CAD Models
VP1116N5 Part Data Attributes
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VP1116N5
Supertex Inc
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Datasheet
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VP1116N5
Supertex Inc
Power Field-Effect Transistor, 1.8A I(D), 160V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SUPERTEX INC | |
| Part Package Code | SFM | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 160 V | |
| Drain Current-Max (ID) | 1.8 A | |
| Drain-source On Resistance-Max | 5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 7 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for VP1116N5
This table gives cross-reference parts and alternative options found for VP1116N5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VP1116N5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPP07N60CFDHKSA1 | Power Field-Effect Transistor, 6.6A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | VP1116N5 vs SPP07N60CFDHKSA1 |
| SGSP492 | 40A, 50V, 0.033ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | VP1116N5 vs SGSP492 |
| IRF9632 | Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | VP1116N5 vs IRF9632 |
| STW25NM60ND | N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package | STMicroelectronics | VP1116N5 vs STW25NM60ND |
| IRF9612 | Power Field-Effect Transistor, 1.5A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | VP1116N5 vs IRF9612 |
| IRF9632 | 5.5A, 200V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | VP1116N5 vs IRF9632 |
| VP1120N5 | Power Field-Effect Transistor, 1.8A I(D), 200V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Supertex Inc | VP1116N5 vs VP1120N5 |
| APT5010B2FLC | 47A, 500V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TMAX-3 | Microsemi Corporation | VP1116N5 vs APT5010B2FLC |
| APT5010B2FLC | Power Field-Effect Transistor, 47A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 | Advanced Power Technology | VP1116N5 vs APT5010B2FLC |
| FQY45N50F | Power Field-Effect Transistor, 45A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, 247, 3 PIN | Fairchild Semiconductor Corporation | VP1116N5 vs FQY45N50F |