| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| Vishay Intertechnologies | Mosfet; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:460Ma; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:1.3W; Msl:- Rohs Compliant: No |Vishay VQ1004P |
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| Vishay Siliconix | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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| Temic Semiconductors | Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED PACKAGE-14 |
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| Supertex Inc | Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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