Part Details for YJL03G10AF2 by Yangzhou Yangjie Electronics Co Ltd
Overview of YJL03G10AF2 by Yangzhou Yangjie Electronics Co Ltd
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Part Details for YJL03G10AF2
YJL03G10AF2 CAD Models
YJL03G10AF2 Part Data Attributes
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YJL03G10AF2
Yangzhou Yangjie Electronics Co Ltd
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Datasheet
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YJL03G10AF2
Yangzhou Yangjie Electronics Co Ltd
Power Field-Effect Transistor, 3A I(D), 100V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | YANGZHOU YANGJIE ELECTRONICS CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 0.14 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 21 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |