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Part Details for ZVNL110GTA by Diodes Incorporated
Results Overview of ZVNL110GTA by Diodes Incorporated
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (4 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
ZVNL110GTA Information
ZVNL110GTA by Diodes Incorporated is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for ZVNL110GTA
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29AK9106
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Newark | Mosfet, N-Ch, 100V, 0.6A, Sot-223 Rohs Compliant: Yes |Diodes Inc. ZVNL110GTA RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 403 |
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$0.4060 / $1.2300 | Buy Now |
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DISTI #
ZVNL110GTA
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Avnet Americas | - Tape and Reel (Alt: ZVNL110GTA) COO: Germany RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.3335 / $0.3544 | Buy Now |
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DISTI #
ZVNL110GTA
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TME | Transistor: N-MOSFET, unipolar, 100V, 0.5A, Idm: 6A, 1.1W, SOT223 Min Qty: 1 | 0 |
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$0.4120 / $1.1700 | RFQ |
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ComSIT USA | 100V N-CHANNEL ENHANCEMENT MODE MOSFET Power Field-Effect Transistor, 0.6A I(D), 100V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
ZVNL110GTA
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Avnet Asia | (Alt: ZVNL110GTA) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
ZVNL110GTA
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Avnet Silica | (Alt: ZVNL110GTA) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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LCSC | 100V 600mA 2W 1.5V1mA 1 N-Channel SOT-223 Single FETs MOSFETs RoHS | 2 |
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$0.3713 / $0.6900 | Buy Now |
Part Details for ZVNL110GTA
ZVNL110GTA CAD Models
ZVNL110GTA Part Data Attributes
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ZVNL110GTA
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
ZVNL110GTA
Diodes Incorporated
Power Field-Effect Transistor, 0.6A I(D), 100V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Part Package Code | SOT-223 | |
| Pin Count | 4 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.6 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 8 pF | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 6 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 28 ns | |
| Turn-on Time-Max (ton) | 19 ns |
Alternate Parts for ZVNL110GTA
This table gives cross-reference parts and alternative options found for ZVNL110GTA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZVNL110GTA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| ZVNL110GTA | Zetex / Diodes Inc | Check for Price | Power Field-Effect Transistor, 0.6A I(D), 100V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | ZVNL110GTA vs ZVNL110GTA |
| ZVNL110G | Zetex / Diodes Inc | Check for Price | Power Field-Effect Transistor, 0.6A I(D), 100V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | ZVNL110GTA vs ZVNL110G |
| ZVNL110GTC | Zetex / Diodes Inc | Check for Price | Power Field-Effect Transistor, 0.6A I(D), 100V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | ZVNL110GTA vs ZVNL110GTC |
| ZVNL110G | Diodes Incorporated | Check for Price | Power Field-Effect Transistor, 0.6A I(D), 100V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | ZVNL110GTA vs ZVNL110G |
ZVNL110GTA Frequently Asked Questions (FAQ)
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A good PCB layout for the ZVNL110GTA involves keeping the input and output traces short and wide, using a solid ground plane, and placing the device close to the power source. Additionally, it's recommended to use a common ground point for the input and output grounds.
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To ensure stability, make sure to follow the recommended operating conditions, use a suitable output capacitor, and avoid overloading the device. Also, ensure that the input voltage is within the recommended range and the device is operated within its specified temperature range.
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The maximum power dissipation of the ZVNL110GTA is dependent on the ambient temperature and the thermal resistance of the device. According to the datasheet, the maximum power dissipation is 1.5W at an ambient temperature of 25°C. However, this value can be derated based on the actual operating conditions.
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The ZVNL110GTA is rated for operation up to 125°C, but the device's performance and reliability may degrade at high temperatures. It's recommended to derate the device's power dissipation and ensure proper thermal management to ensure reliable operation in high-temperature environments.
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To troubleshoot issues with the ZVNL110GTA, start by verifying the input voltage, output voltage, and current consumption. Check for any signs of overheating, and ensure that the device is operated within its specified conditions. Use an oscilloscope to check for any oscillations or noise on the output, and consult the datasheet and application notes for guidance.