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Part Details for ZXMN6A11GTA by Diodes Incorporated
Results Overview of ZXMN6A11GTA by Diodes Incorporated
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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ZXMN6A11GTA Information
ZXMN6A11GTA by Diodes Incorporated is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for ZXMN6A11GTA
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
ZXMN6A11GTA
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Avnet Americas | - Tape and Reel (Alt: ZXMN6A11GTA) COO: China RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 743000 Factory Stock |
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$0.1866 / $0.1934 | Buy Now |
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DISTI #
70438841
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RS | MOSFET N-CHANNEL 60V 4.4A SOT223 Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$0.8100 / $0.9500 | RFQ |
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Bristol Electronics | 95 |
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RFQ | ||
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DISTI #
ZXMN6A11GTA-DIO-0
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TME | Transistor: N-MOSFET, N, 60V, 4.4A, SOT223, SMT Min Qty: 1000 | 9000 |
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$0.2965 | Buy Now |
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ComSIT USA | 60V N-CHANNEL ENHANCEMENT MODE MOSFET Power Field-Effect Transistor, 4.4A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
ZXMN6A11GTA
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Avnet Asia | (Alt: ZXMN6A11GTA) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days | 0 |
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$0.2211 / $0.2473 | Buy Now |
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DISTI #
ZXMN6A11GTA
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Avnet Silica | (Alt: ZXMN6A11GTA) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days | Silica - 20000 |
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Buy Now | |
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LCSC | 60V 4.4A 16W 180m4.5V2A 3V 1 N-Channel SOT-223 Single FETs MOSFETs RoHS | 12 |
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$0.3017 / $0.5679 | Buy Now |
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New Advantage Corporation | ZXMN6A11G Series 60 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-223 RoHS: Compliant Min Qty: 1 Package Multiple: 1000 | 238000 |
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$0.4231 / $0.4583 | Buy Now |
Part Details for ZXMN6A11GTA
ZXMN6A11GTA CAD Models
ZXMN6A11GTA Part Data Attributes
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ZXMN6A11GTA
Diodes Incorporated
Buy Now
Datasheet
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ZXMN6A11GTA
Diodes Incorporated
Small Signal Field-Effect Transistor, 3.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Part Package Code | SOT-223 | |
| Package Description | SOT-223, 4 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 3.1 A | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 17.1 pF | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 15.6 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
ZXMN6A11GTA Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the ZXMN6A11GTA is a standard SOT23 package with a 1.3mm x 1.3mm pad size and a 0.5mm x 0.5mm thermal pad.
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To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 1uF and a maximum ESR of 1 ohm, and to place the output capacitor as close to the output pin as possible.
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The maximum ambient temperature range for the ZXMN6A11GTA is -40°C to 125°C, but the device can operate up to 150°C with derating.
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Yes, the ZXMN6A11GTA is suitable for high-reliability applications, as it is built with a robust design and has undergone rigorous testing to ensure its reliability and performance.
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The power dissipation of the ZXMN6A11GTA can be calculated using the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current.