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Transistors / IGBTs / A1P25S12M3-F
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A1P25S12M3-F by: STMicroelectronics

ACEPACK 1 sixpack topology, 1200 V, 25 A, trench gate field-stop IGBT M series, soft diode and NTC

Part Details for A1P25S12M3-F by STMicroelectronics

Overview of A1P25S12M3-F by STMicroelectronics

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Applications Education and Research Industrial Automation Aerospace and Defense Agriculture Technology Motor control systems Robotics and Drones

Price & Stock for A1P25S12M3-F

Part # Distributor Description Stock Price Buy
DISTI # 47AC8727
Newark Igbt, Module, N-Ch, 1.2Kv, 25A, Transistor Polarity:N Channel, Dc Collector Current:25A, Collector Emitter Saturation Voltage Vce(On):1.95V, Power Dissipation Pd:197W, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Stmicroelectronics A1P25S12M3-F Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $49.1100
  • 5 $46.6900
  • 10 $44.0100
  • 25 $41.0600
  • 50 $38.3700
  • 100 $37.5700
  • 250 $36.5000
$36.5000 / $49.1100 Buy Now
DISTI # 497-17739-ND
DigiKey IGBT MOD 1200V 25A 197W ACEPACK1 Min Qty: 1 Lead time: 99 Weeks Container: Tray Temporarily Out of Stock
  • 1 $47.9100
  • 10 $42.6890
  • 36 $40.1461
  • 108 $37.4696
  • 252 $36.1314
$36.1314 / $47.9100 Buy Now
DISTI # A1P25S12M3-F
Avnet Americas Transistor IGBT Module N-CH 1.2kV 25A ±20V Screw - Trays (Alt: A1P25S12M3-F) RoHS: Compliant Min Qty: 36 Package Multiple: 18 Container: Tray 0
  • 36 $39.3510
  • 72 $38.5560
  • 108 $37.7611
  • 180 $36.9661
  • 360 $36.1711
  • 1,800 $35.3762
  • 3,600 $34.5812
$34.5812 / $39.3510 Buy Now
DISTI # 511-A1P25S12M3-F
Mouser Electronics IGBT Modules ACEPACK 1 sixpack topology, 1200 V, 25 A, trench gate field-stop IGBT M series, RoHS: Compliant 0
  • 36 $40.1400
  • 108 $37.4600
$37.4600 / $40.1400 Order Now
STMicroelectronics ACEPACK 1 sixpack topology, 1200 V, 25 A, trench gate field-stop IGBT M series, soft diode and NTC RoHS: Compliant Min Qty: 1 0
  • 1 $46.9500
  • 10 $41.8400
  • 18 $39.3400
  • 54 $39.3400
  • 108 $36.7100
  • 252 $35.4100
$35.4100 / $46.9500 Buy Now
Future Electronics A1P25S12M3 Series 1200 V 25 A SMT Trench Gate Field-Stop IGBT - ACEPACK™ 1 RoHS: Compliant pbFree: Yes Min Qty: 44 Package Multiple: 22 Container: Tray 0
Tray
  • 22 $37.5000
  • 44 $37.2700
  • 66 $37.1300
  • 88 $37.0400
  • 110 $36.7300
$36.7300 / $37.5000 Buy Now
Future Electronics A1P25S12M3 Series 1200 V 25 A SMT Trench Gate Field-Stop IGBT - ACEPACK™ 1 RoHS: Compliant pbFree: Yes Min Qty: 44 Package Multiple: 22 Container: Tray 0
Tray
  • 22 $37.5000
  • 44 $37.2700
  • 66 $37.1300
  • 88 $37.0400
  • 110 $36.7300
$36.7300 / $37.5000 Buy Now
Future Electronics A1P25S12M3 Series 1200 V 25 A SMT Trench Gate Field-Stop IGBT - ACEPACK™ 1 RoHS: Compliant pbFree: Yes Min Qty: 18 Package Multiple: 18 Container: Tray 0
Tray
  • 18 $37.5300
  • 36 $37.2900
  • 54 $37.1500
  • 72 $37.0500
  • 90 $36.7300
$36.7300 / $37.5300 Buy Now
Future Electronics A1P25S12M3 Series 1200 V 25 A SMT Trench Gate Field-Stop IGBT - ACEPACK™ 1 RoHS: Compliant pbFree: Yes Min Qty: 22 Package Multiple: 22 Container: Tray 0
Tray
  • 22 $37.5000
  • 44 $37.2700
  • 66 $37.1300
  • 88 $37.0400
  • 110 $36.7300
$36.7300 / $37.5000 Buy Now
DISTI # A1P25S12M3-F
Avnet Silica Transistor IGBT Module N-CH 1.2kV 25A �20V Screw (Alt: A1P25S12M3-F) RoHS: Compliant Min Qty: 18 Package Multiple: 18 Lead time: 53 Weeks, 0 Days Silica - 0
Buy Now
DISTI # A1P25S12M3-F
EBV Elektronik Transistor IGBT Module N-CH 1.2kV 25A �20V Screw (Alt: A1P25S12M3-F) RoHS: Compliant Min Qty: 18 Package Multiple: 18 Lead time: 53 Weeks, 0 Days EBV - 0
Buy Now

Part Details for A1P25S12M3-F

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A1P25S12M3-F Part Data Attributes

Parametric Data
A1P25S12M3-F STMicroelectronics
Buy Now Datasheet
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A1P25S12M3-F STMicroelectronics ACEPACK 1 sixpack topology, 1200 V, 25 A, trench gate field-stop IGBT M series, soft diode and NTC
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description MODULE-22
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Case Connection ISOLATED
Collector Current-Max (IC) 25 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X22
Number of Elements 6
Number of Terminals 22
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 197 W
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 326 ns
Turn-on Time-Nom (ton) 139 ns
VCEsat-Max 2.45 V

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