Datasheets
A3I35D012WGNR1 by: NXP Semiconductors

Narrow Band Medium Power Amplifier

Part Details for A3I35D012WGNR1 by NXP Semiconductors

Overview of A3I35D012WGNR1 by NXP Semiconductors

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Price & Stock for A3I35D012WGNR1

Part # Distributor Description Stock Price Buy
DISTI # 85AK8115
Newark Airfast Rf Ldmos Wideband Integrated Power Amplifier, 3200-4000 Mhz, 1.8 W Avg., 28 V/Reel Rohs Compliant: Yes |Nxp A3I35D012WGNR1 Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $27.9600
$27.9600 Buy Now
DISTI # 78AC7998
Newark Airfast Rf Ldmos Wideband Integrated Power Amplifier, 3200-4000 Mhz, 1.8 W Avg., 28 V Rohs Compliant: Yes |Nxp A3I35D012WGNR1 Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $27.3500
$27.3500 Buy Now
Rochester Electronics A3I35D012 - Airfast RF LDMOS Wideband Integrated Power Amplifier RoHS: Compliant Status: Obsolete Min Qty: 1 500
  • 1 $32.9800
  • 25 $32.3200
  • 100 $31.0000
  • 500 $29.6800
  • 1,000 $28.0300
$28.0300 / $32.9800 Buy Now

Part Details for A3I35D012WGNR1

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A3I35D012WGNR1 Part Data Attributes

A3I35D012WGNR1 NXP Semiconductors
Buy Now Datasheet
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A3I35D012WGNR1 NXP Semiconductors Narrow Band Medium Power Amplifier
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description FLNG,.72"H.SPACE
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.33.00.01
Factory Lead Time 26 Weeks
Date Of Intro 2018-11-26
Characteristic Impedance 50 Ω
Construction COMPONENT
Gain 26.5 dB
Input Power-Max (CW) 26 dBm
Mounting Feature SURFACE MOUNT
Number of Functions 2
Number of Terminals 17
Operating Frequency-Max 4000 MHz
Operating Frequency-Min 3200 MHz
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Equivalence Code FLNG,.72"H.SPACE
Power Supplies 28 V
RF/Microwave Device Type NARROW BAND MEDIUM POWER
Surface Mount YES

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