AM81214-030
Description: RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.250 INCH, FM-2

Overview of AM81214-030 by Advanced Semiconductor Inc

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Where used in Applications: Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

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Part Data Attributes for AM81214-030 by Advanced Semiconductor Inc

AM81214-030
Advanced Semiconductor Inc
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
ASI SEMICONDUCTOR INC
Package Description
FLANGE MOUNT, R-CDFM-F2
Pin Count
2
Reach Compliance Code
unknown
ECCN Code
EAR99
Collector Current-Max (IC)
2.75 A
Configuration
SINGLE
Highest Frequency Band
L BAND
JESD-30 Code
R-CDFM-F2
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
250 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
NPN
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
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  1. AM81214-030
    Advanced Semiconductor Inc
    RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.250 INCH, FM-2
    VS

Alternate Parts for AM81214-030

This table gives cross-reference parts and alternative options found for AM81214-030. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AM81214-030, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
ALR030 RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, Advanced Semiconductor Inc AM81214-030 vs ALR030
Part Number Description Manufacturer Compare
PH1214-55EL TRANSISTOR,BJT,NPN,58V V(BR)CEO,7A I(C),FO-91VAR TE Connectivity AM81214-030 vs PH1214-55EL
PH1214-12M RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 MACOM AM81214-030 vs PH1214-12M
AM81214-030 L BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, S064, 2 PIN STMicroelectronics AM81214-030 vs AM81214-030
AM81214-060 L BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, S042, 2 PIN STMicroelectronics AM81214-030 vs AM81214-060
RZ1214B65Y RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, Advanced Semiconductor Inc AM81214-030 vs RZ1214B65Y
RZ1214B65Y TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power NXP Semiconductors AM81214-030 vs RZ1214B65Y
933755380114 TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power NXP Semiconductors AM81214-030 vs 933755380114
PH1214-25M TRANSISTOR,BJT,NPN,70V V(BR)CEO,2.8A I(C),FO-41BVAR TE Connectivity AM81214-030 vs PH1214-25M
ALR030 RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, Advanced Semiconductor Inc AM81214-030 vs ALR030
RZ1214B35Y TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR, METAL CERAMIC, SOT-443A, 3 PIN, BIP RF Power NXP Semiconductors AM81214-030 vs RZ1214B35Y

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