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Part Details for AO3414 by Alpha & Omega Semiconductor
Results Overview of AO3414 by Alpha & Omega Semiconductor
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
AO3414 Information
AO3414 by Alpha & Omega Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AO3414
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 8173 |
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RFQ | ||
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DISTI #
AO3414
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TME | Transistor: N-MOSFET, unipolar, 20V, 2.5A, 900mW, SOT23 Min Qty: 1 | 0 |
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$0.0700 / $0.1850 | RFQ |
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ComSIT USA | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS: Compliant |
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RFQ | |
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CHIPMALL.COM LIMITED | 20V 3A 85m@1.8V,2.5A 900mW 700mV@250uA 1 N-Channel SOT-23-3L MOSFETs ROHS | 1126 |
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$0.0423 / $0.0830 | Buy Now |
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LCSC | 20V 3A 85m1.8V2.5A 900mW 700mV250uA 1 N-channel SOT-23-3L MOSFETs ROHS | 336 |
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$0.0441 / $0.0865 | Buy Now |
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Win Source Electronics | MOSFET N-CH 20V 4.2A SOT23 | 248500 |
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$0.0378 / $0.0487 | Buy Now |
Part Details for AO3414
AO3414 CAD Models
AO3414 Part Data Attributes
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AO3414
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Compare Parts:
AO3414
Alpha & Omega Semiconductor
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Alpha & Omega Semiconductors | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4.2 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |