Part Details for AOB12N65L by Alpha & Omega Semiconductor
Overview of AOB12N65L by Alpha & Omega Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for AOB12N65L
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
785-1717-1-ND
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DigiKey | MOSFET N-CH 650V 12A TO263 Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1094 In Stock |
|
$0.8377 / $1.9300 | Buy Now |
DISTI #
AOB12N65L
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TME | Transistor: N-MOSFET, unipolar, 650V, 7.7A, 40W, TO263 Min Qty: 1 | 795 |
|
$0.9700 / $1.3900 | Buy Now |
Part Details for AOB12N65L
AOB12N65L CAD Models
AOB12N65L Part Data Attributes:
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AOB12N65L
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Compare Parts:
AOB12N65L
Alpha & Omega Semiconductor
MOSFET NCH 650V 12A TO263
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Alpha & Omega Semiconductors | |
Avalanche Energy Rating (Eas) | 750 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.72 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 18 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 278 W | |
Pulsed Drain Current-Max (IDM) | 48 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |