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Power Field-Effect Transistor, 70A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, DPAK-3
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AOD403 by Alpha & Omega Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 720 |
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RFQ | ||
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Bristol Electronics | 315 |
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RFQ | ||
DISTI #
AOD403
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TME | Transistor: P-MOSFET, unipolar, -30V, -55A, 45W, TO252 Min Qty: 1 | 2164 |
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$0.2830 / $0.7450 | Buy Now |
DISTI #
SMC-AOD403
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Sensible Micro Corporation | TRANS IPD90P03P4L-04 TO252 RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 2020+ | 1308 |
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RFQ | |
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CHIPMALL.COM LIMITED | 30V 6m@20V,20A 3.5V@250uA 1 Piece P-Channel TO-252-2DPAK MOSFETs ROHS | 1288 |
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$0.1774 / $0.3669 | Buy Now |
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LCSC | 30V 6m20V20A 3.5V250uA 1 Piece P-Channel TO-252-2(DPAK) MOSFETs ROHS | 32 |
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$0.2002 / $0.4142 | Buy Now |
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Win Source Electronics | Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) DPAK / MOSFET P-CH 30V 15A TO252 | 50000 |
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$0.1930 / $0.2890 | Buy Now |
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AOD403
Alpha & Omega Semiconductor
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Datasheet
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AOD403
Alpha & Omega Semiconductor
Power Field-Effect Transistor, 70A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
Part Package Code | TO-252 | |
Package Description | GREEN, DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Alpha & Omega Semiconductors | |
Avalanche Energy Rating (Eas) | 125 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 70 A | |
Drain-source On Resistance-Max | 0.008 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 136 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |