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AOD609 by:

Transistor

Part Details for AOD609 by Alpha & Omega Semiconductor

Overview of AOD609 by Alpha & Omega Semiconductor

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Price & Stock for AOD609

Part # Distributor Description Stock Price Buy
DISTI # 785-1607-1-ND
DigiKey MOSFET N/P-CH 40V 12A TO252-4L Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 151736
In Stock
  • 1 $0.9200
  • 10 $0.8010
  • 100 $0.5545
  • 500 $0.4633
  • 1,000 $0.3943
  • 2,500 $0.3512
  • 5,000 $0.3327
  • 12,500 $0.3080
  • 25,000 $0.3050
$0.3050 / $0.9200 Buy Now
DISTI # AOD609
TME Transistor: N/P-MOSFET, unipolar, complementary pair, 40/-40V Min Qty: 1 415
  • 1 $0.7820
  • 5 $0.3910
  • 25 $0.3130
  • 100 $0.2900
  • 500 $0.2680
$0.2680 / $0.7820 Buy Now
DISTI # C1S111400617690
Chip1Stop Trans MOSFET N/P-CH 40V 12A 5-Pin(4+Tab) DPAK T/R RoHS: Compliant pbFree: Yes 2050
  • 1 $0.5850
  • 10 $0.4180
  • 25 $0.3690
$0.3690 / $0.5850 Buy Now
Win Source Electronics MOSFET N/P-CH 40V 12A TO252-4 20000
  • 130 $0.3960
  • 310 $0.3250
  • 480 $0.3150
  • 660 $0.3050
  • 850 $0.2950
  • 1,140 $0.2640
$0.2640 / $0.3960 Buy Now

Part Details for AOD609

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AOD609 Part Data Attributes

AOD609 Alpha & Omega Semiconductor
Buy Now Datasheet
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AOD609 Alpha & Omega Semiconductor Transistor
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD
Package Description DPAK-5/4
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Alpha & Omega Semiconductors
Case Connection DRAIN
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 43 pF
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation Ambient-Max 2 W
Power Dissipation-Max (Abs) 27 W
Pulsed Drain Current-Max (IDM) 30 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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