Part Details for AOD7S65 by Alpha & Omega Semiconductor
Overview of AOD7S65 by Alpha & Omega Semiconductor
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for AOD7S65
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
785-1537-1-ND
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DigiKey | MOSFET N-CH 650V 7A TO252 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2492 In Stock |
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$0.6275 / $1.5000 | Buy Now |
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DISTI #
22105486
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Verical | Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 | Americas - 2500 |
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$0.4880 / $0.5125 | Buy Now |
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DISTI #
AOD7S65
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TME | Transistor: N-MOSFET, unipolar, 650V, 5A, 89W, TO252 Min Qty: 1 | 0 |
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$0.6400 / $0.9600 | RFQ |
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ComSIT USA | 650V 7A alpha MOS Power Transistor Power Field-Effect Transistor, 7A I(D), 650V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | Europe - 2500 |
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RFQ | |
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Chip1Cloud | MOSFET N-CH 650V 7A TO252 | 5850 |
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RFQ |
Part Details for AOD7S65
AOD7S65 CAD Models
AOD7S65 Part Data Attributes
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AOD7S65
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Compare Parts:
AOD7S65
Alpha & Omega Semiconductor
Transistor
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| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Alpha & Omega Semiconductors | |
| Avalanche Energy Rating (Eas) | 86 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.65 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1 pF | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 89 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |