There are no models available for this part yet.
Overview of AOI296A by Alpha & Omega Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Price & Stock for AOI296A by Alpha & Omega Semiconductor
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
AOI296A-ND
|
DigiKey | MOSFET N-CH 100V 70A TO251A Min Qty: 3500 Lead time: 16 Weeks Container: Tube | Limited Supply - Call |
|
$0.5900 | Buy Now | |
|
DISTI #
AOI296A
|
TME | Transistor: N-MOSFET, unipolar, 100V, 45A, 35W, TO251A Min Qty: 1 | 2964 |
|
$0.8200 / $1.2400 | Buy Now |
CAD Models for AOI296A by Alpha & Omega Semiconductor
Part Data Attributes for AOI296A by Alpha & Omega Semiconductor
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Not Recommended
|
|
Ihs Manufacturer
|
ALPHA & OMEGA SEMICONDUCTOR LTD
|
|
Package Description
|
TO-251A, IPAK-3
|
|
Reach Compliance Code
|
compliant
|
|
Avalanche Energy Rating (Eas)
|
54 mJ
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
100 V
|
|
Drain Current-Max (ID)
|
70 A
|
|
Drain-source On Resistance-Max
|
0.0106 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss)
|
12.5 pF
|
|
JEDEC-95 Code
|
TO-251
|
|
JESD-30 Code
|
R-PSIP-T3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
IN-LINE
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
89 W
|
|
Pulsed Drain Current-Max (IDM)
|
195 A
|
|
Surface Mount
|
NO
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|