Part Details for AOK40B65H2AL by Alpha & Omega Semiconductor
Overview of AOK40B65H2AL by Alpha & Omega Semiconductor
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for AOK40B65H2AL
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
AOK40B65H2AL-ND
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DigiKey | IGBT 650V 40A TO-247 Min Qty: 240 Lead time: 16 Weeks Container: Tube | Temporarily Out of Stock |
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$1.8252 | Buy Now |
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DISTI #
AOK40B65H2AL
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TME | Transistor: IGBT, 650V, 40A, 105W, TO247, Eoff: 0.54mJ, Eon: 1.17mJ Min Qty: 1 | 116 |
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$1.4000 / $2.0900 | Buy Now |
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LCSC | 260W 80A 650V TO-247 IGBT Transistors / Modules ROHS | 98 |
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$1.0337 / $1.6664 | Buy Now |
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Sense Electronic Company Limited | TO-247 | 2091 |
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RFQ |
Part Details for AOK40B65H2AL
AOK40B65H2AL CAD Models
AOK40B65H2AL Part Data Attributes
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AOK40B65H2AL
Alpha & Omega Semiconductor
Buy Now
Datasheet
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AOK40B65H2AL
Alpha & Omega Semiconductor
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Alpha & Omega Semiconductors | |
| Collector Current-Max (IC) | 80 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 30 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 260 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 151 ns | |
| Turn-on Time-Nom (ton) | 64 ns | |
| VCEsat-Max | 2.6 V |