Datasheets
AON6262E by:

MOSFET N-CH 60V 40A 8DFN

Part Details for AON6262E by Alpha & Omega Semiconductor

Overview of AON6262E by Alpha & Omega Semiconductor

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Applications Automotive

Price & Stock for AON6262E

Part # Distributor Description Stock Price Buy
DISTI # 800-3747-1-ND
DigiKey MOSFET N-CH 60V 40A 8DFN Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 14732
In Stock
  • 1 $1.0800
  • 10 $0.8860
  • 100 $0.6893
  • 500 $0.5843
  • 1,000 $0.4760
  • 3,000 $0.4481
  • 6,000 $0.4267
  • 9,000 $0.4070
$0.4070 / $1.0800 Buy Now
DISTI # 74065324
Verical Trans MOSFET N-CH 60V 40A 8-Pin DFN EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2343 Americas - 57000
  • 3,000 $0.3927
  • 6,000 $0.3741
  • 9,000 $0.3566
$0.3566 / $0.3927 Buy Now
Chip1Cloud MOSFET N-CH 60V 40A 8DFN 1900
RFQ
LCSC 60V 40A 6.2m10V20A 48W 2.2V250uA 1PCSNChannel PDFN-8(5.2x5.6) MOSFETs ROHS 1921
  • 1 $0.4158
  • 10 $0.3356
  • 30 $0.3005
  • 100 $0.2568
  • 500 $0.2247
  • 1,000 $0.2130
$0.2130 / $0.4158 Buy Now

Part Details for AON6262E

AON6262E CAD Models

AON6262E Part Data Attributes:

AON6262E Alpha & Omega Semiconductor
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AON6262E Alpha & Omega Semiconductor MOSFET N-CH 60V 40A 8DFN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD
Package Description DFN-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Alpha & Omega Semiconductors
Avalanche Energy Rating (Eas) 79 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.0085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 52 pF
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 48 W
Pulsed Drain Current-Max (IDM) 145 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

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